Session 15: Fluctuations
Location: Conference
Room New York
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| 14:00 |
Impact
of Scattering on Random Dopant Induced Current Fluctuations in Decanano
MOSFETs
Alexander,
C., Brown, A. R., Watling, J. R., Asenov, A.
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|
Department
of Electronics and Electrical Engineering, University of Glasgow, UK |
|
|
14:20
|
Analysis
of Random Doping and Oxide Thickness Induced Fluctuations in Nanoscale
Semiconductor Devices through Poisson-Schrödinger Computations
Mayergoyz,
I. D., Andrei, P.
|
|
Department
of Electrical and Computer Engineering, College Park, MD, USA |
|
|
14:40
|
Stable
simulation of impurity fluctuation for contact resistance and Schottky
diodes
Matsuzawa1,
K., Sano2, N.
|
|
1
Advanced LSI Technology Laboratory, Toshiba Corporation, Japan
2 Institute of Applied Physics, University of
Tsukuba, Japan |
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|
| 15:00
|
Coffee
Break
|
|
|
15:30
|
Impact
of the Floating Body Effect on Noise in SOI Devices Investigated by
Hydrodynamic Simulation
Jungemann,
C., Neinhüs, B., Nguyen, C. D., Meinerzhagen, B.
|
|
NST,
TU Braunschweig, Germany |
|
|
15:50
|
Examination
of Spatial Frequency Dependence of Line Edge Roughness on MOS Device
Characteristics
Oldiges,
P., Murthy, C.
|
|
IBM Semiconductor Research and
Development Center (SRDC),
Microelectronics
Division, Hopewell Junction, USA
|
|
|
16:10
|
Simulation
of Lithography-caused Gate Length and Interconnect Linewidth
Variational Impact on Circuit Performance in Nanoscale Semiconductor
Choi,
M.,Jia, C., Milor, L.
|
|
School
of Electrical and Computer Engineering, Georgia Institute of
Technology, Atlanta, U.S.A. |
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