Session 14: Reliability and Failure
Simulation
Location: Conference
Room London
|
| 11:00 |
Electro-thermal
Simulations of Strained-Si MOSFETs under ESD conditions
Chun,
J.-H., Choi, C.-H., Dutton, R. W.
|
|
Center
for Integrated Systems, Stanford University, USA |
|
|
11:20
|
Simulation
of the Cross-Coupling among Snap Back Devices under Transient High
Current Stress
Groos1,
G., Jensen2, N., Denison2, M., Stecher2,
M.
|
|
1
University of the Federal Armed Forces Munich, Germany
2 Infineon Technologies, Munich, Germany |
|
|
11:40
|
Simulation
of the failure mechanism of power DMOS transistors under avalanche
stress
Icaza
Deckelmann1, A., Wachutka1, G., Krumrey2,
J., Hirler2, F.
|
|
1
Institute for Physics of Elecrotechnology, Munich University of
Technology, Germany
2 Infineon Technologies AG, Munich, Germany |
|
|
| 12:00
|
An
Accurate and Comprehensive Soft Error Simulator NISES II
Tosaka,
Y., Satoh, S., Oka, H.
|
|
Fujitsu
Laboratories Ltd., Japan |
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