Session 12: Plenary
Location: Conference
Room New York / London |
| 09:00 |
Comprehensive
Understanding of Carrier Mobility in MOSFETs with Oxynitrides and
Ultrathin Gate Oxides
Ishihara1,
T., Koga1, J., Takagi2, S.
|
|
1
Advanced LSI Technology Laboratory, Corporate Research &
Development Center, Toshiba Corporation, Japan
2 Department of Frontier Informatics, Graduate
School of Frontier Science, The University of Tokyo, Japan |
|
|
09:45
|
Physics
and Modeling of Radiation Effects in Advanced CMOS Technology Nodes
Claeys1,2,
C., Simoen1, E.
|
|
1
IMEC, Belgium
2 EE. Dept., KU Leuven, Belgium |
|
