Conference Programme – IWCE-7
This is the conference programme, as of 7th April. It will be subject to some modification. A PDF version will be available for download once the final programme has been confirmed.
Sunday 21st May
16:00 – 19:00 Registration in Gilmorehill Centre
Monday 22nd May
08:30 Formal Welcome and Opening Remarks
08:45 Keynote Address - Computational Electronics and Nanotechnology in NASA IT Program, Henry McDonald, Center Director, NASA Ames Research Centre.
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Session: |
Semiconductor Device Modelling 1 |
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09:15 – 09:45 |
Simulation of stochastic doping effects in Si MOSFETs (Invited) D. Frank, IBM T. J. Watson Research Center |
Coffee Break
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Session: |
Semiconductor Device Modelling 2 |
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10:00 – 10:15 |
3D simulations of ultra-small MOSFETs: The role of the discrete impurities on the device terminal characteristics W. J. Gross, D. Vasileska and D. K. Ferry |
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10:15 – 10:30 |
Atomistic simulation of quantum dots including strain and bandstructure and full band simulation of hole transport in 1-D heterostructures. G. Klimeck, R. C. Bowen and T. B. Boykin |
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10:30 – 10:45 |
Simulating quasi-ballistic transport in Si nanotransistors K. Banoo, J.-H. Rhew, M. Lundstrom, C.-W. Shu, J. W. Jerome |
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10:45 – 11:15 |
Quantum corrections to the atomistic MOSFET simulation (Invited) A. Asenov, University of Glasgow |
Coffee Break
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Session: |
Shotgun – Poster Session 1 |
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11:25 – 12:00 |
All participants in Poster Session 1 – 1min 30second presentations. |
Poster Session 1 and
Lunch Break (1hour 30minutes)
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Session: |
Optoelectronic Device Simulation |
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13:30 – 14:00 |
Simulation of optoelectronic devices (Invited) P. Lugli, Univ. Degli Studi Di Roma |
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14:00 – 14:15 |
A full 3-dimensional quantum well laser simulation B. Witzigmann, A. Witzig and W. Fichtner |
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14:15 – 14:30 |
Monte Carlo particle modelling of self-organization and pulsing in multiple quantum well infrared photodetectors M. Ryzhii, V. Ryzhii, R. Suris, C. Hamaguchi |
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14:30 – 14:45 |
Monte Carlo calculations of amplification spectrum for GaN THz transit-time resonance Maser E. Starikov, P. Shiktorov, V Gruzinskis, L Reggiani, L. Varani, J. C. Vaissiere, J. H. Zhao |
Break
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Session: |
Particle and Fluid Simulation Methods 1 |
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15:00 – 15:30 |
Numerical studies of miniband conduction in quasi-one-dimensional superlattices (Invited) N. Mori, C. Hamaguchi, Osaka University, L. Eaves, P. C. Main, University of Nottingham |
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15:30 – 15:45 |
Cluster-based parallel 3-D Monte Carlo device simulation A. Kepkep, U. Ravaioli and B. Winstead |
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15:45 – 16:00 |
Efficient silicon device simulation with the Local Iterative Monte Carlo method J. Jakumeit, T, Mietzner and U. Ravaioli |
Coffee Break
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Session: |
Quantum Simulation Methods 1 |
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16:15 – 16:45 |
Theory of quantum transport through molecular and atomic bridges (Invited) M. Tsukada, University of Tokyo |
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16:45 – 17:00 |
Simplex algorithm for band structure calculation of noncubic symmetry semiconductors: application to III-nitride binaries and alloys E. Ghillino, C. Garetto, M. Goano, G. Ghione, E. Bellotti and K. F. Brennan |
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17:00 – 17:15 |
Tight binding simulation of quantum transport in interband tunneling devices M. Ogawa, R. Tominaga, and T. Miyoshi |
18:00 Hot Snack and
18:45 Conference Whisky Tasting (Sponsored by Scottish Enterprise).
To be held in the University Dining Rooms
Tuesday 23rd May
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Session: |
Semiconductor Device Modelling 3 |
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08:30 – 09:00 |
Computational techniques for the nonequilibrium quantum field theory simulation of MOSFETs (Invited) D. Jovanovic, Motorola Inc. |
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09:00 – 09:15 |
Ultra-small MOSFETs: The importance of the full Coulomb interaction on device characteristics W. J. Gross, D. Vasileska and D. K. Ferry |
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09:15 – 09:30 |
A Generalized Finite Element Method for Hydrodynamic Modeling of Short Channel Devices, M. Shen, M.-C. Cheng and J. J. Liou |
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09:30 – 09:45 |
Langevin forces and generalized transfer fields for noise modeling in deep submicron devices P. Shiktorov, E. Starikov, V. Gruzhinskis, T. Gonzalez, J. Mateos, D. Pardo, L. Reggiani, L. Varani and J. C. Vaissiere |
Coffee Break
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Session: |
Nanostructures 1 |
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10:00 – 10:30 |
Dynamics of electrons interacting with phonons in quantum dots (Invited) T. Inoshita, NTT and H. Sakaki, University of Tokyo. |
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10:30 – 10:45 |
Self-consistent full-band modeling of quantum semiconductor nanostructures F. Chirico, A. Di Carlo and P. Lugli |
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10:45 – 11:00 |
Numerical simulation of quantum logic gates based on quantum wires A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, S. Reggiani |
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11:00 – 11:15 |
Transport through carbon nanotube wires M. P. Anantram, NASA |
Break
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Session: |
Shotgun – Poster Session 2 |
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11:25 – 12:00 |
All participants in Poster Session 2 – 1min 30sec presentations. |
Poster Session 2 and
Lunch Break (1hour 30minutes)
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Session: |
Technology and Process Simulation |
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13:30 – 14:00 |
Modelling 3D fluctuation effects in highly scaled VLSI devices (Invited) T. Linton, Intel Corp. |
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14:00 – 14:30 |
Multiscale modeling in semiconductor processing (Invited) M. Meyyappan, NASA Ames Research Center. |
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14:30 – 14:45 |
Impact of scaling on CMOS IC failure rate and design rules for reliability A. Haggag, K. Hess. W. McMahon and L. F. Register |
Break
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Session: |
Particle and Fluid Simulation Methods 2 |
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15:00 – 15:30 |
Monte Carlo modeling of Wurtzite and 4H phase semiconductor materials (Invited) K. F. Brennan, E. Bellotti, M. Farahmand, Georgia Tech., H.-E. Nillson, Mid-Sweden University, P. P. Ruden, Y. Zhang, University of Minnesota |
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15:30 – 15:45 |
Hybrid particle-based full-band analysis of ultra-small MOS S. M. Goodnick, S. J. Wigger and M. Saraniti |
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15:45 – 16:00 |
An analytic expression of thermal diffusion coefficients for the hydrodynamic simulation of semiconductor devices T.-W. Tang, X. Wang and H. Gan |
Coffee Break
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Session: |
Quantum Simulation Methods 2 |
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16:15 – 16:45 |
Theoretical investigation of the ultrathin Si-SiO2 heterojunction and the role of nitrogen at the Si-SiO2 interface (Invited) A. A. Demkov, Motorola Predictive Engineering – CMG. |
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16:45 – 17:00 |
Study of electronic transport in tunnelling devices using an incoherent superposition of time dependent wave packets X. Oriols and J. Suñé |
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17:00 – 17:15 |
Simulation of a complete chain of QCA cells with realistic potentials M. Girlanda and M. Macucci |
18:00 Buses depart for Civic Reception at Glasgow City Chambers
(Light refreshments provided, delegates will be provided with restaurant lists for dining in Glasgow City Centre)
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Session: |
Semiconductor Device Modelling 4 |
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08:30 – 09:00 |
Simulation at the start of the new millennium: crossing the quantum mechanical threshold (Invited) D. K. Ferry, Arizona State University |
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09:00 – 09:15 |
Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs F. M. Bufler, P. D. Yoder and W. Fichtner |
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09:15 – 09:30 |
Non-equilibrium transport in deep sub-micron well-tempered Si p-MOSFETs J. R. Watling, Y. P. Zhao, A. Asenov and J. R. Barker |
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09:30 – 09:45 |
Influence of electron-electron interaction on electron distributions in short Si-MOSFETs analysed using the Local Iterative Monte Carlo technique T. Mietzner, J. Jakumiet, U. Ravaioli |
Coffee Break
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Session: |
Simulation Software: Academe – Industry Liaison |
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10:00 – 10:30 |
Invited Presentations |
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10:30 – 11:45 |
Panel Discussion |
Lunch Break (1hour 45minutes)
13:30 Buses depart for NEC fabrication plant visit
14:30 Arrive NEC fabrication plant, Livingston.
19:00 – 22.00 Conference Banquet, Hunterian Museum, Gilbert Scott Building
22:00 – 24.00 College Club opens for continued ad hoc sessions.
Thursday 25th May
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Session: |
Nanostructures 2 |
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08:30 – 09:00 |
Simulation of biological ionic channels by technology computer-aided design (Invited) K. Hess, U. Ravaioli, N. R. Aluru, M. Gupta, Beckman Institute, R. S. Eisenberg, Rush Medical College |
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09:00 – 09:15 |
Analytic I-V model for single-electron transistors X. Wang and W. Porod |
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09:15 – 09:30 |
Design optimization of Coulomb blockade devices H.-O. Müller, D. A. Williams, H. Mizuta |
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09:30 – 09:45 |
A fast algorithm for the study of wave-packet scattering at disordered interfaces J. R. Barker, J. R. Watling and R. Wilkins |
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09:45 – 10:00 |
Scattered packet method for the simulation of the spatio-temporal evolution of local pertubations P. Gaubert, L. Varani, J. C. Vaissiere, J. P. Nougier, E. Starikov, P. Shiktorov, and V. Gruzhinskis |
Coffee Break
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Session: |
Quantum Simulation Methods 3 |
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10:15 – 10:45 |
Wigner path methods in quantum transport with dissipation (Invited) P. Bordone, University of Modena. |
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10:45 – 11:15 |
Wigner function methods in modelling of switching in resonant tunnelling devices (Invited) H. Grubin, Scientific Research Associates Inc. |
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11:15 – 11:45 |
Quantum Monte Carlo study of Si self-interstitials (Invited) R. Needs, Cambridge |
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11:45 – 12:00 |
A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices J. R. Barker |
Conference Concludes
Poster Session Papers – Session 1
Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing, K. Horio, Y. Mitani, A. Wakabayashi and N. Kurosawa
Optimization of FIBMOS through 2-D Device Simulations, J. Kang, X. He, D. Vasileska and D. K. Schroder
The deterministic circuit model for noise influence on the averaged transient responses of large scale nonlinear ICs analysed with Itô's stochastic differential equations, M. Willander and Y. Mamontov
Evaluation of an equivalent hole effective mass for Si/SiGe structures, S. Rodriguez, J. Banqueri and J. E. Carceller
Visualization of Large-scale Atomic Interactions during the Melting and Crystallization Process, R. Durikovic
Simulation of submicron silicon diodes with a non-parabolic hydrodynamical model based on the Maximum Entropy principle, O. Muscato and V. Romano
Investigation of the local force approximation in numerical device simulation by full band Monte Carlo simulation, C. Jungemann, B. Neinhüs and B. Meinerzhagen
Hot electron modelling of HEMTs, E. A. B. Cole, C. M. Snowden, S. Hussian
Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes, D. Oriato, Alison B. Walker and W. N. Wang
Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Sub-micron LDD MOSFETs, A. Harkar and R. W. Kelsall
Electronic transport in self-organised molecular nanostructure devices, A. Pecchia, B. Movaghar, R. W. Kelsall, A. Bourlange, S. Evans, B. Hickey, N. Boden
Calculation of Transport Properties for Si02, E. Gnani, S. Reggiani, R. Colle and M. Rudan
Measurements and Simulation of Boron Diffusivity in Strained Si1-xGex Epitaxial Layers, K. Rajendran and W. Schoenmaker
2-D Hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors, M. Rousseau and J. C. De Jaeger
2D quantum simulation of MOSFET using the non-equilibrium Green’s function method A. Svizhenko, M. P. Anantram and T. R. Govindan
An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices, M. Shen, W.-K. Yip, M.-C. Cheng and J. J. Liou
An efficient Under-relaxation Method for Simulation of Quantum Well Structures, R. Khoie and S. Ramey
Quantum potential approaches for nano-scale device simulation, H. Tsuchiya, B. Winstead and U. Ravaioli
Three-dimensional spectral solution of Schrodinger equation with arbitrary bands, A. Trellakis and U. Ravaioli
A Ballistic-Hydrodynamic model for Transport in Nano-devices, J. A. Carrillo, I. M. Gamba and C.-W. Shu
Two dimensional MESFET simulation of transients and steady-state with kinetic based hydrodynamic models, A. M. Anile, S. F. Liotta, G. Mascali and S. Rinaudo
A percolative approach to reliability of thin film interconnects and ultra-thin dielectrics, C. Pennetta, L. Reggianni, Gy. Trefan, R. Cataldo and G. De Nunzio
Poster Session Papers – Session 2
Quantum Transport Modeling of Current Noise in Quantum Devices, T. Miyoshi, T. Miyamoto and M. Ogawa
Dynamical equation and Monte Carlo simulation of the two-time Wigner function for electron quantum transport, R. Brunetti, A. Bertoni, P. Bordone and C. Jacoboni
Maximum entropy principle within a total energy scheme for hot carrier transport in semiconductor devices, M. Trovato, L. Reggiani
Quantum Transport with the Generalized Monte Carlo approach: The effect of non-diagonal injection, R. Proietti, F. Rossi, A. Di Carlo and P. Lugli
Microscopic modeling of GaN-based heterostructures, F. Sacconi, F. Della Sala, A. Di Carlo, P. Lugli
Density-Functional Based Tight-Binding Calculations on Thiophene Polymorphism, J. Widany, G. Daminelli A. Di Carlo and P. Lugli
An ionised impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution, S. Barraud, P. Dollfus, S. Galdin, R. Rengal, M. J. Martin and J. E. Velazquez
Sensitive quantum dot infrared detector with barrier-limited photoelectron capture, V. Mitin, V. Pipa, A. Sergeev, M. Dutta, M. Stroscio
A Backward Monte Carlo Method for Simulation of Electron Quantum Kinetics in Semiconductors, M. Nedjalkov, H. Kosina, S. Selberherr and I.Dimmov
Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages, P. Zhao and H. L. Cui and D. Woolard
Flexible Object-Oriented Device Simulation Using Encapsulated Scattering Tables, J. Harris and D. Vasileska
Design and Simulation of an experiment for assessing the operation of QCA cells, M. Gattobigio, M. Macucci and G. Iannaccone
Three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nMOSFETs, G. Iannaccone and E. Amirante
Program, erase and retention times of thin-oxide Flash-EEPROMs, G. Iannaccone and S. Gennai
Scaling of pHEMTs to decanano dimensions, K. Kalna, A. Asenov, K. Elgaid and I. Thayne
Modelling the Impact of Discretized Donor Distribution for Ultra-Small Scale Transistors, P. C. M. Machado, C. M. Snowden and P. Harrison
Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices, J. R. Watling, J. R. Barker and A. Asenov
Computational Quantum Field Analysis for Devices, K. Fukuda
Dynamics of non-equilibrium short-wave-length phonons in semiconductor heterostructures, D. A. Romanov, J . Eizenkop and V. V. Mitin
Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices, J. R. Barker and J. R. Watling
Simulation of 0.35µm/0.25µm CMOS technology doping profiles, M. Lorenzini, L. Haspeslagh, J. Van Houdt and H. E. Maes