Preliminary Program


Fifth International Workshop on
Computational Electronics

Notre Dame, Indiana
May 28-30, 1997

All sessions and social events will be held at the Center for Continuing Education (CCE) on the campus of the University of Notre Dame.



Registration and Reception

4:00 - 9:00 pm

7:00 - 9:00 pm
Reception (food and drinks will be available)


7:00 - 8:00

8:15 - 8:30
Welcome and Opening Remarks

8:30 - 9:00
Merits and Faults of Sub-Micron Device Simulation from a Designer Perspective (Invited), Emmanuel Crabbé , IBM

9:00 - 9:30
Two-Dimensional Carrier Transport in Si MOSFETs (Invited), Shin-ichi Takagi , Toshiba, Japan

9:30 - 10:00
Monte Carlo Simulations of Impact Ionization Feedback (Invited), Jeff D. Bude , Bell Labs, Lucent Technologies

10:00 - 10:30

10:30 - 10:45
Numerical Simulation of MOSFETs Using Nonequilibrium Quantum Field Theory, Dejan Jovanovic , Ulvi Erdogan , Chris Bowen , and Roger Lake , Texas Instruments

10:45 - 11:00
Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations, R. W. Kelsall and A. J. Lidsey , Univ. Leeds, UK

11:00 -11:15
Two Dimensional Modeling of HEMTs using Multigrids with Quantum Corrections, Eric A. B. Cole , Tobias Boettcher , and Christopher M. Snowden , Univ. Leeds, UK

11:15 - 11:30
p-Si Monte Carlo Simulator for Deep Submicron MOS Devices, N. A. Bannov , W. C. Holton , and K. W. Kim , North Carolina State Univ.

11:30 - 11:45
MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation - Overview and Applications, Mark Peskin and Christine Maziar , Univ. Texas at Austin

11:45 - 12:00
High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band versus Analytic Band Model, F. M. Bufler , P. Graf , and B. Meinerzhagen , Univ. Bremen, Germany
12:00 - 1:30


1:30 - 2:00
Hierarchical Simulation for ULSI Process Design - From Atomistic to Conventional Process CAD (Invited), S. Onga , T. K. Okada , H. Takada , T. Koyanagi , Toshiba, Japan , E. Kan and R. W. Dutton , Stanford Univ.

2:00 - 2:15
Necessary Roughness of MOS Interface for Device Simulation, Edwin C. Kan , Heng-Chih Lin , and Robert W. Dutton , Stanford Univ.

Non-Uniformity Effects in Ultra-Thin Tunneling Oxides, D. Z.-Y. Ting , Erik S. Daniel , and T. C. McGill , Cal Tech

2:30 - 2:45

2:45 - 3:15
Modeling of Thermal Effects in Semiconductor Structures (Invited), Christopher Snowden , Univ. Leeds, UK

3:15 - 3:30
Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation, A. Greiner and L. Reggiani , Univ. Lecce , Italy, T. Kuhn , Univ. Münster , Germany, L. Varani , Univ. Montpellier , France, P. Golinelli , Univ. Modena , Italy, M. C. Vecchi , Univ. Bologna, Italy

3:30 - 3:45
Heat Dissipation from Quantum Structures, V. V. Mitin , G. Paulavicius , N. Bannov , Wayne State Univ. , and M. A. Stroscio , U.S. Army Research Office

3:45 - 4:00

4:00 - 4:30
Molecular Wires: Conductance, Geometric Dependence, Energetics, Electron Repulsion and Their Relationship to Intramolecular Electron Transfer (Invited), Mark A. Ratner , Northwestern Univ.

4:30 - 4:45
Simulation of Molecular Electronic Devices, Weidong Tian and Supriyo Datta , Purdue Univ.

4:45 - 5:00
Drift-Diffusion Equations Describe an Important Biological System: Ionic Channels in Membranes, R. S. Eisenberg , Rush Medical Center, Chicago

5:00 - 6:30
POSTER VIEWING (snacks and drinks will be available) 6:30 - 7:00
The NEMO Project or Writing Research Software in a Large Group (Invited), Gerhard Klimeck , Dan Blanks , Roger Lake , R. Chris Bowen , Manhua Leng , Chenjing L. Fernando , William R. Frensley , Dejan Jovanovic , and Paul Sotirelis , Corporate R&D, Texas Instruments Incorporated and School of Engineering, The University of Texas at Dallas

7:00 - 7:30
Software Demo Previews (short presentations)

7:30 - 9:00
Software Demos (food and drinks will be available)

Preliminary List :

Bob Dutton et al., Stanford Univ.
Device and Process Simulation Tools

Bill Frensley, UT Dallas
Interactive Modeling and Design Tools

Neil Goldsman et al., Univ. Maryland
Spherical Harmonics and Hydrodynamic Simulation Tools

Harold Grubin, Scientific Res. Assoc.
PC Windows Interactive Modeling of Quantum Devices

Gerhard Klimeck, Dejan Jovanovic, Roger Lake, et al., TI
NEMO - Nanotechnology Engineering MOdeling program

Steve Laux and Max Fischetti, IBM
DAMOCLES - Device Analysis using MOnte CarLo Et poisson Solver

Craig Lent et al., Univ. Notre Dame
AQUINAS - A QUantum Interconnected Network Array Simulator

Mark Lundstrom and Umberto Ravaioli, Purdue and Illinois
"Simulation Hub," an Online Simulation Laboratory

Hans Kosina and Christian Troger, Techn. Univ. Vienna
SPIN - Schrödinger Poisson Solver Including Non-Parabolicity

Michael Obrecht, Siborg Systems, Inc
PC-based Educational Tools in Microelectronics

Christoph Wasshuber, Techn. Univ. Vienna
SIMON - single-electron device and circuit simulator


7:00 - 8:00

8:30 - 9:00
Photonic Device Modeling for Telecommunication Purposes (Invited), Kiyoyuki Yokoyama , NTT, Japan

9:00 - 9:30
Modeling and Simulation of Semiconductor DFB Lasers: A Hierarchical Approach (Invited), Wei-Ping Huang and Xun Li , University of Waterloo, Canada

9:30 - 10:00
Numerical Methods for Semiconductor Laser Simulations (Invited), R. K. Smith , M. A. Alam , G. A. Baraff , M. S. Hybertsen , Bell Laboratories, Lucent Technologies

10:00 - 10:15
Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers, Benjamin Klein , Leonard F. Register , and Karl Hess , Univ. Illinois at Urbana-Champaign

10:15 - 10:45

10:45 - 11:15
Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes (Invited), G. Zandler , TU Munich , Germany , M. Saraniti , Arizona State Univ. , P. Vogl , TU Munich , Germany, P. Lugli , Univ. Rome, Italy

11:15 - 11:30
3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs, A. R. Brown , A. Asenov , and J. R. Barker , Univ. Glasgow, UK

11:30 - 11:45
Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations, A. Trellakis , A. T. Galik , A. Pacelli , and U. Ravaioli , Univ. Illinois at Urbana-Champaign

11:45 -12:00
Cellular Automata Studies of Vertical Silicon Devices, M. Saraniti , Arizona State Univ. , G. Zandler , TU Munich , Germany, and S. Goodnick , Arizona State Univ.

12:00 - 1:30

1:30 - 2:00
Large Scale Distributed Parallel Computing (Invited), Harold Trease , Los Alamos National Laboratory

2:00 - 2:15
X3D Moving Grid Methods for Semiconductor Applications, Denise George , David Cartwright , J. Tinka Gammel , Brian Kendrick , David Kilcrease , Andrew Kuprat , Harold Trease , and Robert Walker , Los Alamos National Laboratory

2:15 - 2:30
The Finite-Volume Scharfetter-Gummel Method for Steady Convection-Diffusion Equations, Randolph E. Bank , UC San Diego , W. M. Coughran, Jr. , and Lawrence C. Cowsar , Bell Labs, Lucent Technologies

2:30 - 2:45
Multilevel Algorithms for Large-Scope Molecular Dynamics Simulations of Nanostructures on Parallel Computers, Aiichiro Nakano , Rajiv K. Kalia , and Priya Vashishta , Louisiana State Univ.

2:45 - 3:00
Ensemble Monte Carlo and Full-Wave Electrodynamics Models Implemented Self-Consistently on a Parallel Processor Using Perfectly Matched Layer Boundary Conditions, Ik-Sung Lim , Motorola , Robert O. Grondin and Samir El-Ghazaly , Arizona State Univ.

3:00 - 3:30

3:30 - 3:45
Applicability of the High Field Model: An Analytical Study via Asymptotic Parameters Defining Domain Decomposition, Carlo Cercignani , Politecnico di Milano, Italy , Irene Gamba , Courant Institute, New York University , Joseph Jerome , Northwestern Univ. , and Chi-Wang Shu , Brown Univ.

3:45 - 4:00
Smooth QHD Simulation of the Resonant Tunneling Diode, Carl L. Gardner and Christian Ringhofer , Arizona State Univ.

4:00 - 4:15
Spherical Harmonic Analysis of a 0.05 mm Base BJT: Monte Carlo-Type Results But a Thousand Times Faster, C.-H. Chang , C.-K. Lin , N. Goldsman , and I. D. Mayergoyz , Univ. Maryland

4:15 - 4:30
Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials, Joseph W. Parks, Jr. , Kevin F. Brennan , Georgia Tech, and Arlyn W. Smith , ITT Night Vision

4:30 - 4:45
A Semi-Classical Description of Electron Transport in Semiconductor Quantum Well Devices, Gene A. Baraff , Lucent Technologies Bell Labaratories

4:45 - 5:00
Electronic Structure Calculations Using an Adaptive Wavelet Basis
D. A. Richie , P. von Allmen , K. Hess , and R. Martin , Univ. Illinois at Urbana-Champaign

5:00 - 7:00
POSTER VIEWING (snacks and drinks will be available)

7:00 - 9:00

Dinner Talk
The Art, Science, and Challenges of Simulating Advanced Devices (Invited), Jerry Mar , Intel

FRIDAY, May 30

7:00 - 8:00

8:30 - 9:00
Open Problems in Quantum Simulation in Ultra-Submicron Devices (Invited), David K. Ferry , Arizona State Univ. , and John R. Barker , Univ. Glasgow, UK

9:00 - 9:15
Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation, M. V. Fischetti , IBM Research Division

9:15 - 9:30
Modeling of Nano-Scale Ballistic Field-Effect Transistors, F. G. Pikus and K. K. Likharev , SUNY Stony Brook

9:30 - 9:45
Quantum Transport in Open Nanostructures, I. V. Zozoulenko and K.-F. Berggren , Linköping University, Sweden

9:45 - 10:00
Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of the Electron-Phonon Interaction, C. Jacoboni , A. Abramo , P. Bordone , R. Brunetti , and M. Pascoli , Univ. Modena, Italy

10:00 - 10:30

10:30 -11:00
Quantum Networks: Dynamics of Open Nanostructures (Invited), Günter Mahler , Oregon Center of Optics and Universität Stuttgart, Germany

11:00 - 11:15
A Generalized Monte Carlo Approach for the Analysis of Quantum-Transport Phenomena in Mesoscopic Systems: Interplay between Coherence and Relaxation, Fausto Rossi , Univ. Modena , Italy, Stefano Ragazzi , Aldo Di Carlo , and Paolo Lugli , Univ. Roma, Italy

11:15 - 11:30
Coherent Control of Light Absorption in Semiconductor Nanostructures, W. Pötz and X. Hu , Univ. Illinois at Chicag o

11:30 -11:45
A New Computational Approach to Photon-Assisted Tunneling in Intense Driving Fields Based on a Fabry-Perot Analogy, Mathias Wagner , Hitachi Cambridge, UK

11:45 -12:00
Phase Space Boundary Conditions and Quantum Device Transport
H. L. Grubin and J. R. Caspar , Scientific Research Associates, Inc., and D. K. Ferry , Arizona State Univ. 12:00 - 1:30

1:30 -1:45
Single-Electron Memories, Christoph Wasshuber , Hans Kosina , and Siegfried Selberherr , TU Vienna, Austria

1:45 - 2:00
Electron-LA Phonon Interaction in a Quantum Dot, T. Ezaki , N. Mori , and C. Hamaguchi , Osaka University, Japan

2:00 - 2:15
Numerical Analysis of Asymmetric Single Electron Turnstiles using Monte Carlo Simulation, Masaharu Kirihara and Kenji Taniguchi , Osaka University, Japan

2:15 - 2:30
Self-Consistent Calculation of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot, A. Scholz e, A. Wettstein , A. Schenk , and W. Fichtner , ETH-Zürich, Switzerland

2:30 - 2:45
An Interband Tunneling Oscillator: Self-Oscillations of Trapped Hole Charge in a Double-Barrier Structure, F. A. Buot , U.S. Naval Research Laboratory

2:45 - 3:00
Tunneling between Multimode Stacked Quantum Wires, M. Macucci , Univ. Pisa, Italy , A. T. Galick and U. Ravaioli , Univ. Illinois at Urbana-Champaign

3:00 - 3:15
Ballistic Directional Coupler on the DQW-Basis, A. N. Korshak , Z. S. Gribnikov , N. Z. Vagidov , S. I. Kozlovsky , and V. V. Mitin , Institute of Semiconductor Physics, Kiev, Ukraine and Wayne State Univ.



Computation of Auger Recombination Rates in Semiconductor Quantum Wells, A. D. Andreev , Ioffe Institute, St. Petersburg, Russia

Modeling of Mid-Infrared Multi-Quantum Well Lasers, A. D. Andreev , Ioffe Institute, St. Petersburg, Russia

On the Numerical Simulation of a Thermistor Device, Charles Miller and Hong-Ming Yin , Univ. Notre Dame

A New HEMT Breakdown Model Incorporating Gate and Thermal Effects, Lufti Albasha , Christopher M. Snowden , and Roger D. Pollard , Univ. Leeds, UK

Monte Carlo Simulation of Non-local Transport Effects in Strained Si on Relaxed Si1-xGex Heterostructures, F. Gámiz , J. B. Roldán , and J. A. López-Villanueva , Univ. Granada, Spain

A b-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization, F. Gámiz , J. B. Roldán , and J. A. López-Villanueva , Univ. Granada, Spain

A Closed-Loop Evaluation and Validation of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs, J. B. Roldán , F. Gámiz , and J. A. López-Villanueva , Univ. Granada, Spain

Interaction of 2D Electrons with Acoustic Phonons near the Semiconductor Surface and its Effect on 2D Electron Transport, B. A. Glavin , V. I. Pipa , V. V. Mitin , Wayne State Univ. , and M. Stroscio , U.S. Army Research Office

Quantum Distribution-Function Transport Equations in Non-Normal Systems and in Ultra-Fast Dynamics of Optically-Excited Semiconductors, F. A. Buot , U.S. Naval Research Laboratory

Applicability of the High Field Model: A Preliminary Numerical Study, Carlo Cercignani , Politecnico di Milano , Italy, Irene Gamba , Courant Institute, New York University , Joseph Jerome , Northwestern Univ. , and Chi-Wang Shu , Brown Univ.

Simulation of Bistable Laser Diodes with Inhomogeneous Excitation, Gang Fang and Ting-wei Tang , Univ. Massachusetts

Intersubband Relaxation in Step Quantum Well Structures, J. P. Sun , H. B. Teng , G. I. Haddad , Univ. Michigan , and M. A. Stroscio and G. J. Iafrate , U.S. Army Research Office

Symplectic Finite-Element Time-Domain Method for Optical Field Analysis, T. Hirono , W. Lui , and K. Yokoyama , NTT, Japan

Resonances in Conductance through Tunable Attractors, Yong S. Joe , Tian Xie , and Ronald M. Cosby , Ball State Univ.

A New Method to Overcome the Divergent Problem in Numerical Modeling of Power 6H-SiC Devices, Edward H. S. Hsing and Jeffrey L. Gray , Purdue Univ.

Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs, D. Vasileska , W. J. Gross , V. Kafedziski , and D. K. Ferry , Arizona State Univ.

Wave-function Scarring Effects in Open Ballistic Quantum Cavities, R. Akis and D. K. Ferry , Arizona State Univ.

Complete RF Analysis of Compound FETs based on Transient Monte Carlo Simulation, S. Babiker , A. Asenov , N. Cameron , S. P. Beaumont , and J. R. Barker , Glasgow Univ., UK

Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs, A. Asenov , S. Babiker , S. P. Beaumont , and J. R. Barker , Glasgow Univ., UK

A New Approach for Obtaining Self-Consistent Solutions to the Coupled Schrodinger and Poisson System in Multiquantum Well Structures, Fred Gelbard and Kevin J. Malloy , Univ. New Mexico

Numerical Evaluation of Iterative Schemes for Drift-Diffusion Simulation, M. B. Patil , U. Ravaioli , and T. Kerkhoven , Univ. Illinois at Urbana-Champaign

Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method and Evolutionary Optimization, J. Jakumeit , Univ. Köln , A. Duncan , U. Ravaioli , and K. Hess , Univ. Illinois at Urbana-Champaign

Positron Slowing Down in Solids, N. Bouarissa , Univ. Setif, Algeria

An Alternative Geometry for Quantum Cellular Automata, P. Douglas Tougaw , Paul Krause , Rachel Mueller , and Janelle Weidner , Valparaiso Univ.

Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes, S. Bennett , C. M. Snowden , and S. Iezekiel , Univ. Leeds, UK

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analysed through a Full-Band, Spherical-Harmonics Solution of the BTE, S. Reggiani , M. C. Vecchi , and M. Rudan , Univ. Bologna, Italy

Monte Carlo Simulation of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well, R. W. Kelsall , Univ. Leeds, UK

VLSI Yield Prediction Using a Pattern-Recognition Based Critical Area Algorithm, J. H. N. Mattick , R. W. Kelsall , and R. E. Miles , Univ. Leeds, UK

Bi-dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models for Heterojunction Semiconductor Devices using Mixed Finite Elements, A. Marrocco and Ph. Montarnal , INRIA, Le Chesnay Cedex, France

Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations, Alfredo J. Piazza and Can E. Korman , George Washington Univ .

Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models for the Relaxation Times, B. Neinhüs , S. Decker , P. Graf , F. M. Bufler , and B. Meinerzhagen , Univ. Bremen, Germany

Additive Decomposition of the Drift-Diffusion Model, Elizabeth J. Brauer , Marek Turowski , and James M. McDonough , Univ. Kentucky

Supersymmetric Quantum Mechanics (SUSY-QM) Applied to Quantum-Wire Devices, William R. Grise , Morehead State Univ.

Monte Carlo Simulations of High Field Transport in Electroluminescent Devices, M. Dür and S. M. Goodnick , ASU , M. Reigrotzki and R. Redmer , Univ. Rostock, Germany

Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System, K. A. Remley , A. Weisshaar , S. M. Goodnick , and V. K. Tripathi , Oregon State Univ.

Continuity of Charge Transfer in Single-Electron Tunnel Junction Arrays, K. A. Matsuoka and K. K. Likharev , SUNY Stony Brook

New "Irreducible Wedge" for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations, John Stanley and Neil Goldsman , Univ. Maryland

A Self-Consistent Model for Quantum Well pin Solar Cells, S. Ramey and R. Khoie , Univ. Nevada, Las Vegas

Hydrodynamic (HD) Simulations of N-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model, Haihong Wang , Wei-Kai Shih , Susan Green , Scott Hareland , Christine Maziar , and Al Tasch , Univ. Texas at Austin

Study of Electron Velocity Overshoot in nMOS Inversion Layers, W.-K. Shih , S. Jallepalli , M. Rashed , C. M. Maziar , and A. F. Tasch, Jr. , Univ. Texas at Austin

Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation, T. Okada and K. Horio , Shibaura Institute of Technology, Japan

Time Dependent Hydrodynamic Model of MESFET, C. C. Lee , H. L. Cui , J. Cai , and R. Pastore , Stevens Institute of Technology , D. Woolard and D. Rhodes , U.S. Army Research Lab, Fort Monmouth

Inelastic Quantum Transport in the Presence of Infra-Red Radiation, Patrick Roblin and Zohios Jerasimos , Ohio State Univ.

Shell-Filling Effects in Circular Quantum Dots, M. Macucci , Univ. Pisa, Italy, and Karl Hess , Univ. Illinois at Urbana-Champaign

Modeling of Shot Noise in Resonant Tunneling Structures, G. Iannaccone , Univ. Pisa, Italy

Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport, Paul Hasler , Andreas G. Andreou , Chris Diorio , Bradley A. Minch , and Carver A. Mead , Cal Tech

Comparison of Variance Reduction Schemes for Monte Carlo Semiconductor Simulation, Carl J. Wordelman, Univ. Illinois , Andrea Pacelli , Politecnico di Milano , Mark G. Gray and Thomas J. T. Kwan , Los Alamos National Lab

Edge Element Solution of Optical Dielectric Cavities, A. T. Galick , Univ. Illinois at Urbana-Champaign

Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator, F. Oyafuso , P. von Allmen , M. Grupen , and K. Hess , Univ. Illinois at Urbana-Champaign

Coupled Free Carrier and Exciton Dynamics in Bulk and Quantum Well Semiconductor Materials, M. Gulia , Univ. Modena , Italy, F. Compagnone , Univ. Roma , Italy, P. E. Selbman , Swiss Federal Inst. Lausanne, F. Rossi , E. Molinari , Univ. Modena , Italy, P. Lugli , Univ. Roma, Italy

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-Consistent Tight-Binding Calculations, A. Di Carlo , S. Pescetelli , A. Reale , M. Paciotti , and P. Lugli , Univ. Roma, Italy,

Transient Phenomena in High Speed Bipolar Devices, Michael S. Obrecht , Edwin L. Heasell , Jiri Vlach , and Mohamed I. Elmasry , University of Waterloo, Canada

Acoustic Phonon Modulation of the Electron Response in Tunnel-Coupled Quantum Wells, G. Ya. Kis and F. T. Vasko , Institute of Semiconductor Physics, Kiev, Ukraine , and V. V. Mitin , Wayne State Univ.

Cathode Shape Influence on Subterahertz Oscillations of Ballistic Quantized Hole Current, A. N. Korshak , Z. S. Gribnikov , N. Z. Vagidov , S. I. Kozlovsky , and V. V. Mitin , Institute of Semiconductor Physics, Kiev, Ukraine and Wayne State Univ.

Transverse Patterns in the Bistable Resonant Tunneling Systems under Ballistic Lateral Electron Transport, V. A. Kochelap , B. A. Glavin , and V. V. Mitin , Institute of Semiconductor Physics, Kiev, Ukraine and Wayne State Univ.

RF Performance of Si/SiGe MODFETs: A Simulation Study, S. Roy , A. Asenov , J. R. Barker , and S. P. Beaumont , Univ. Glasgow, UK

Ab-Initio Coulomb Scattering in Atomistic Device Simulation, C. R. Arokianathan , J. H. Davies , and A. Asenov , Univ. Glasgow, UK

SPIN - A Schrödinger Poisson Solver Including Non-Parabolic Bands, Hans Kosina and Christian Troger , TU Vienna, Austria

Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models, S. M. Sohel Imtiaz , Samir M. El-Ghazaly , and Robert O. Grondin , Arizona State Univ.

Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices, J.-F. Lin and D. Z.-Y. Ting , National Tsing Hua Univ., Hsinchu, Taiwan

Multiband Quantum Transmitting Boundary Method for Non-Orthogonal Basis, G.-C. Liang , Y. A. Lin , D. Z.-Y. Ting , National Tsing Hua Univ., Hsinchu, Taiwan , and Y.-C. Chang , University of Illinois at Urbana-Champaign

Calibration of a One Dimensional Hydrodynamic Simulator with Monte Carlo Date, O. Muscato , S. Rinaudo , and P. Falsaperla , Universita di Catania and SGS-THOMSON, Catania, Italy

Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductor, Angelo Marcello Anile , Universita di Catania , Italy , Vittorio Romano , Politecnico di Bari, Taranto , Italy , and Giovanni Russo , Universita di L'Aquila, Italy

A Hydrodynamical Model for Transport in Semiconductors without Free Parameters, P. Falsaperla and M. Trovato , Universita di Catania, Italy

Modeling of Poly-Silicon Carrier Transport with Explicit Treatment of Grains and Grain Boundaries, Edwin C. Kan and Robert W. Dutton , Stanford Univ.

Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation, Kausar Banoo , Farzin Assad , and Mark Lundstrom , Purdu e Univ.

Modeling of Hot Carrier Effects in Semiconductor Lasers, Valery I. Tolstikhin and Theo G. van der Roer , TU Eindhoven, Netherlands

Quadratic Electron Wind in Electromigration, Alfred M. Kriman , R. Frankovic , and G. H. Bernstein , SUNY Buffalo and Univ. Notre Dame

Semiclassical Many-Body Simulation, Jae-Hyun Yu and Alfred M. Kriman , SUNY Buffalo and Univ. Notre Dame

A 3D Nonlinear Poisson Solver, Gyula Veszely , TU Budapest, Hungary

Equilibrium Aspects of Quantum Dot Formation, Istvan Daruka and Albert-Laszlo Barabasi , Univ. Notre Dame

Energy Dissipation in Quantum-Dot Cellular Automata, John Timler and Craig S. Lent , Univ. Notre Dame

Electrostatic Formation of a Coupled Quantum Dot, Per Hyldgaard , Henry K. Harbury , and Wolfgang Porod , Univ. Notre Dame

A Novel Method for Computing Particle Distributions, Fred H. Schlereth , Syracuse Univ.

Nonperturbative Many Electron Approach Based on the Representation of Scattering States for Simulating Optoelectronic Devices using Laser-Assisted Field Emission, Andres J. Barrios , Valery G. Valeyev , Mark J. Hagmann , and Carolyne M. Van Vliet , Florida International University

Electron Transport in One-Dimensional Magnetic Superlattices, Zhen-Li Ji and D. W. L. Sprung , McMaster University, Canada

Boundary Conditions for the Modeling of Open-Circuited Devices in Non-Equilibrium, Joseph W. Parks, Jr. and Kevin F. Brennan , Georgia Tech