Plenary and Invited Speakers

Announcement of Special Events:

Plenary Talks

"TCAD Challenge in the Nanotechnology Era"
Martin D. Giles (Intel Corp., USA)

"The R-Sigma method for Nanoscale-Device Analysis"
Massimo Rudan (Univ. of Bologna, Italy)

"MOSFET Modeling Beyond 100nm Technology: Challenges and Perspectives"
M. Miura-Mattausch (Hiroshima Univ., Japan)

Invited Talks

"Simulation of Quantum Transport in Small Semiconductor Devices"
M. V. Fischetti (Univ. of Massachusetts, Amherst, USA)

"Molecular dynamics simulation of plasma-surface interactions during dry etching processes."
Satoshi Hamaguchi (Osaka Univ., Japan)

"Physics and Performance of Phase Change Memories"
Andrea Lacaita (Politecnico di Milano, Italy)