Conference Schedule




MORNING AFTERNOON EVENING
Thursday
Sept. 1
Diamond
Room
(1F)
9:00-11:25 Session 1: Plenary Session
(3 Plenary)
13:00-15:10

15:10-15:30

15:30-17:30
Session 2: Bulk MOSFET
(1 Invited, 5 Regular)
Break

Session 3: SOI Devices
(6 Regular)

Hohoh
Room
(3F)




18:00-20:00
Reception
Friday
Sept. 2
Diamond
Room
(1F)
9:00-10:30

10:30-10:50

10:50-12:10
Session 4: Process Modeling
(1 Invited, 3 Regular)
Break

Session 5: CNT and Widegap
(4 Regular)
13:30-15:30

15:30-18:30
Session 7: Device Characterization
(6 Regular)
Poster Session
(Diamond Room, Exhibition Space)

Hohoh
Room
(3F)
10:50-12:10 Session 6: Device Applications
(4 Regular)
13:30-15:30 Session 8: Simulaiton Techniques
(6 Regular)

Saturday
Sept. 3
Diamond
Room
(1F)
9:00-10:30

10:30-10:50

10:50-12:10
Session 9: Nano-Devices
(1 Invited, 3 Regular)
Break

Session 10: Multi-Gate Transistors
(4 Regular)
13:30-15:10

15:10-15:30

15:30-17:10
Session 11: Strained Devices 1
(5 Regular)
Break

Session 12: Strained Devices 2
(5 Regular)