TECHNICAL PROGRAM

Technical Program:
September 3, 2003
September 5, 2003

Thursday, September 4

Session 3 - Fluctuations


8:30 - 9:15
I-5

"The Physical and Numerical Implications of the Noise Modeling Method: IFM, CPM, and ERS"
H. Nah, S.-M. Hong, Y. J. Park, H. S. Min, Seoul National University, Seoul, Republic of Korea
9:15 - 9:40
3-1
"Thermal Noise Modeling for Short-Channel MOSFET's"
K. Han, H. Shin, K. Lee, Korea Advanced Institute of Science and Technology, Daejeon, Korea
9:40 - 10:05
3-2
"Simulation of Noise Characteristics Caused by Discretized Traps in MOSFETs"
K. Matsuzawa, T. Ohguro, N. Aoki, Toshiba Corporation, Yokohama, Japan
Break (15 minutes)

10:20 - 10:45
3-3
"Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs"
T.-Y. Oh, C. Jungemann, R. W. Dutton, Stanford University, Stanford, CA
10:45 - 11:10
3-4
"Random Dopant Fluctuation Modelling with the Impedance Field Method"
A. Wettstein, O. Penzin*, E. Lyumkis*, W. Fichtner*, Integrated Systems Engineering AG, Zurich, Switzerland, * Integrated Systems Engineering, Inc., San Jose, CA and **ETH Zurich, Zurich, Switzerland
11:10 - 11:35
3-5
"Analysis of Fluctuations in Ultra-small Semiconductor Devices"
P. Andrei, I.D. Mayergoy, University of Maryland, College Park, MD
11:35 - 12:00
3-6
"Coupled Atomistic 3D Process/Device Simulation Considering Both Line-Edge Roughness and Random-Discrete-Dopant Effects"
M. Hane, T. Ikezawa, T. Ezaki, NEC Corporation, Sagamihara, Japan

Session 4 - Numerics for Process/Device Modeling


1:30 - 2:15
I-6

Invited Speaker
"Recent Advances in Sparse Linear Solver Technology for Semiconductor Device Simulation Matrices"
O. Schenk, S. Roellin and M. Hagemann, University of Basel, Basel, Switzerland
2:15 - 2:40
4-1
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation"
W. Wessner, C. Heitzinger, A. Hossinger, S. Selberherr, TU Vienna, Vienna, Austria
2:40 - 3:05
4-2
"Zero-Flux Boundary Condition in a Two-Probability-Parameter Random Walk Model"
M. Orlowski, Motorola, Austin, TX
3:05 - 3:30
4-3
"On the Inclusion of Floating Domains in Electromagnetic Field Solvers"
W. Schoenmaker, P. Meuris, IMEC, Leuven, Belgium

Session 5 - High Field Device Transport


1:50 - 2:15
5-1

"Detailed Heat Generation Simulations via the Monte Carlo Method"
E. Pop, R. W. Dutton, K. Goodson, Stanford University, Stanford, CA
2:15 - 2:40
5-2
"Investigation of Thermal Breakdown Mechanism in 0.18 m Technology ggNMOS under ESD Condition"
L. M. Hillkirk, J.-H. Chun*, R. W. Dutton*, Royal Institute of Technology, Kista, Sweden and *Stanford University, Stanford, CA
2:40 - 3:05
5-3
"Simulation of Number of Pulses to Breakdown During TLP for ESD Testing"
K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima, Toshiba Corporation, Yokohama, Japan
3:05 - 3:30
5-4
"Characterization of Zener-Tunneling Drain Leakage Current in High-Dose Halo Implants"
C.-H. Choi, S.-H. Yang*, G. Pollack*, S. Ekbote*, P.R. Chidambaram*, S. Johnson*, C. Machala*, R. W. Dutton, Stanford University, Stanford, CA and *Texas Instruments Inc., Dallas, TX
3:30 - 6:30 Poster Session

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