TECHNICAL PROGRAM
SESSION 2: TCAD 2

Chairperson: Chihiro Hamaguchi

Monday, October 25, 10:30 a.m. - 12:15 p.m. Fowler Hall, Stewart Center All abstracts are PDFs and can be read with Adobe Acrobat Reader.
10:30 a.m.	TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade M.D. Giles (Invited Speaker) • abstract • presentation (pdf) Intel Corporation
11:00 a.m.	A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen and S. Selberherr • abstract Institute for Microelectronics NST, TU Braunschweig and Institute for Microelectronics, TU Vienna
11:15 a.m.	Multi-Dimensional Tunneling in Density-Gradient Theory M.G. Ancona and K. Lilja • abstract • presentation (pdf, pps) Naval Research Laboratory and Mixed Technology Associates, LLC
11:30 a.m.	TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1-xGex, Dual Channel pMOSFETs on (001) Relaxes Si1-yGey C.D. Nguyen, A.T. Pham, C. Jungemann, and B. Meinerzhagen • abstract • presentation (pdf) NST, TU Braunschweig
11:45 a.m.	Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors G. Iannaccone • abstract • presentation (pdf, pps available soon) Università degli Studi di Pisa
12:00 a.m.	Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study F. Adamu-Lema, G. Roy, A.R. Brown, A. Asenov, and S. Roy • abstract • presentation (pdf, pps) University of Glasgow
12:15 p.m.	Lunch Buffet