Monday, October 25, 6:00 p.m. - 9:00 p.m.
East and West Faculty Lounges, Purdue Memorial Union with wine tasting and finger foods
All abstracts are PDFs and can be read with Adobe Acrobat Reader.
[TCAD] •
[Monte Carlo] •
[Bio-Nano]
|
TCAD
|
01 |
Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices
P. Andrei and I. Mayergoyz
• abstract
University of Maryland |
02 |
Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations
D. Csontos and S. Ulloa
• abstract
Ohio University |
03 |
Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System
A. Domaingo and F. Schürrer
• abstract
Institute of Theoretical and Computational Physics |
04 |
Scaling pFET Hot-Electron Injection
C. Duffy and P. Hassler
• abstract
Georgia Institute of Technology |
05 |
Robust Computational Models of Quantum Transport in Electronic Devices
A. Fedoseyev, A. Przekwas, M. Turowski, M.S. Wartak
• abstract
CFD Research Corporation and Wilfrid Laurier University |
06 |
Accurate Deterministic Numerical Simulation of p-n Junctions
A. Godoy, P. González, J.A. Carrillo, and F. Gámiz
• abstract
University of Granada |
07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept
R. Hagenbeck, S. Decker, J.M. Fisher, M. Isler, F. Lau, T. Mikolajick, G. Tempel, and P. Haibach
• abstract
Infineon Technologies |
08 |
Subthreshold Mobility Extraction for SOI-MESFETs
T. Khan, D. Vasileska, and T.J. Thornton
• abstract
Arizona State University |
09 |
RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
A. Lee, A.R. Brown, A. Asenov, and S. Roy
• abstract
University of Glasgow |
10 |
Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs
J.-W. Lee and Y. Li
• abstract
National Chiao Tung University |
11 |
Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors
J.-W. Lee, Y. Li, and H.Y. Lin
• abstract
National Chiao Tung University and Toppoly Optoelectronics Corp. |
12 |
Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes
Y. Li , J.-W. Lee, and H.M. Chou
• abstract
National Chiao Tung University |
13 |
A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
Y. Li and S.-M. Yu
• abstract
National Chiao Tung University |
13B |
Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results
Y. Liu and C.W. Shu
• abstract
Brown University and Shangdong University |
14 |
RF Performance of Strained SiGe pMOSFETs: Linearity and Gain
W. Ma and S. Kaya
• abstract
Ohio University |
15 |
Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon
K. Matsuda
• abstract
Naruto University of Education |
16 |
Electrostatics of 3D Carbon Nanotube Field-Effect Transistors
N. Neophytou, J. Guo, and M. Lundstrom
• abstract
Purdue University |
17 |
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
A. Rahman, M. Lundstrom, and A. Ghosh
• abstract
Purdue University |
18 |
A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era
S.-M Yu and Y. Li
• abstract
National Chiao Tung University |
Monte Carlo
|
19 |
Smart-Dust: Monte Carlo Simulation of Self-Organised Transport
J. Barker and A. Barmpoutis
• abstract
University of Glasgow |
20 |
Efficient Memory Management for Cellular Monte Carlo Algorithm
J. Branlard, S. Aboud, S. Goodnick, and M. Saraniti
• abstract
Illinois Institute of Technology, Rush University, and Arizona State University |
21 |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
G. Du, X. Liu, Z. Xia, and R. Han
• abstract
Peking University |
22 |
An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy
F.M. Gómez-Campos, S. Rodríguez-Bolívar and J.E. Carceller
• abstract
Universidad de Granada |
23 |
Monte-Carlo Simulation of Carbon Nanotube Devices
S. Hasan, J. Guo, M. Vaidyanathan, M.A. Alam, and M. Lundstrom
• abstract
Purdue University |
24 |
Monte Carlo Simulations of Phonon Transport in Silicon
A. Asokan and R.W. Kelsall
• abstract
The University of Leeds |
25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
C. Riddet, A. Brown, C. Alexander, J.R. Watling, S. Roy, and A. Asenov
• abstract
University of Glasgow |
26 |
The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation
B. Wu and T.-W. Tang
• abstract
University of Massachusetts |
27 |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
B. Zorman, S. Krishnan, D. Vasileska, J. Xu, and M. Van Schilfgaarde
• abstract
Arizona State University |
Bio-Nano
|
28 |
A Comparative Study of Numerical Algorithms in Calculating Eigenpairs of the Master Equation for Protein Folding Kinetics
Y. Li
• abstract
National Chiao Tung University |
29 |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
D. Marreiro, S. Aboud, M. Saraniti, and R. Eisenberg
• abstract
Illinois Institute of Technology and Rush University |
30 |
Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
C. Millar, A. Asenov, A.R. Brown, and S. Roy
• abstract
Glasgow University |
31 |
Electro-Chemical Modeling Challenges of Biological Ion Pumps
R.F. Rakowski and S. Kaya
• abstract
Ohio University |