TECHNICAL PROGRAM
SESSION 4: POSTER SESSION GROUP 1 - TCAD, MONTE CARLO & BIO-NANO

Shotgun Poster Chairperson: Mark Lundstrom


Monday, October 25, 6:00 p.m. - 9:00 p.m.
East and West Faculty Lounges, Purdue Memorial Union
with wine tasting and finger foods

All abstracts are PDFs and can be read with Adobe Acrobat Reader.

[TCAD]  •  [Monte Carlo]  •  [Bio-Nano]


TCAD
01 Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices
P. Andrei and I. Mayergoyz • abstract
University of Maryland
02 Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations
D. Csontos and S. Ulloa • abstract
Ohio University
03 Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System
A. Domaingo and F. Schürrer • abstract
Institute of Theoretical and Computational Physics
04 Scaling pFET Hot-Electron Injection
C. Duffy and P. Hassler • abstract
Georgia Institute of Technology
05 Robust Computational Models of Quantum Transport in Electronic Devices
A. Fedoseyev, A. Przekwas, M. Turowski, M.S. Wartak • abstract
CFD Research Corporation and Wilfrid Laurier University
06 Accurate Deterministic Numerical Simulation of p-n Junctions
A. Godoy, P. González, J.A. Carrillo, and F. Gámiz • abstract
University of Granada
07 Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept R. Hagenbeck, S. Decker, J.M. Fisher, M. Isler, F. Lau, T. Mikolajick, G. Tempel, and P. Haibach • abstract
Infineon Technologies
08 Subthreshold Mobility Extraction for SOI-MESFETs
T. Khan, D. Vasileska, and T.J. Thornton • abstract
Arizona State University
09 RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks
A. Lee, A.R. Brown, A. Asenov, and S. Roy • abstract
University of Glasgow
10 Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs
J.-W. Lee and Y. Li • abstract
National Chiao Tung University
11 Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors
J.-W. Lee, Y. Li, and H.Y. Lin • abstract
National Chiao Tung University and Toppoly Optoelectronics Corp.
12 Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes
Y. Li , J.-W. Lee, and H.M. Chou • abstract
National Chiao Tung University
13 A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors
Y. Li and S.-M. Yu • abstract
National Chiao Tung University
13B Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results
Y. Liu and C.W. Shu • abstract
Brown University and Shangdong University
14 RF Performance of Strained SiGe pMOSFETs: Linearity and Gain
W. Ma and S. Kaya • abstract
Ohio University
15 Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon
K. Matsuda • abstract
Naruto University of Education
16 Electrostatics of 3D Carbon Nanotube Field-Effect Transistors
N. Neophytou, J. Guo, and M. Lundstrom • abstract
Purdue University
17 Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers
A. Rahman, M. Lundstrom, and A. Ghosh • abstract
Purdue University
18 A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era
S.-M Yu and Y. Li • abstract
National Chiao Tung University

Monte Carlo
19 Smart-Dust: Monte Carlo Simulation of Self-Organised Transport
J. Barker and A. Barmpoutis • abstract
University of Glasgow
20 Efficient Memory Management for Cellular Monte Carlo Algorithm
J. Branlard, S. Aboud, S. Goodnick, and M. Saraniti • abstract
Illinois Institute of Technology, Rush University, and Arizona State University
21 Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation
G. Du, X. Liu, Z. Xia, and R. Han • abstract
Peking University
22 An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy
F.M. Gómez-Campos, S. Rodríguez-Bolívar and J.E. Carceller • abstract
Universidad de Granada
23 Monte-Carlo Simulation of Carbon Nanotube Devices
S. Hasan, J. Guo, M. Vaidyanathan, M.A. Alam, and M. Lundstrom • abstract
Purdue University
24 Monte Carlo Simulations of Phonon Transport in Silicon
A. Asokan and R.W. Kelsall • abstract
The University of Leeds
25 Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study
C. Riddet, A. Brown, C. Alexander, J.R. Watling, S. Roy, and A. Asenov • abstract
University of Glasgow
26 The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation
B. Wu and T.-W. Tang • abstract
University of Massachusetts
27 Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach
B. Zorman, S. Krishnan, D. Vasileska, J. Xu, and M. Van Schilfgaarde • abstract
Arizona State University

Bio-Nano
28 A Comparative Study of Numerical Algorithms in Calculating Eigenpairs of the Master Equation for Protein Folding Kinetics
Y. Li • abstract
National Chiao Tung University
29 Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
D. Marreiro, S. Aboud, M. Saraniti, and R. Eisenberg • abstract
Illinois Institute of Technology and Rush University
30 Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs
C. Millar, A. Asenov, A.R. Brown, and S. Roy • abstract
Glasgow University
31 Electro-Chemical Modeling Challenges of Biological Ion Pumps
R.F. Rakowski and S. Kaya • abstract
Ohio University