TECHNICAL PROGRAM
SESSION 3: MONTE CARLO
Chairperson: Carlo Jacoboni
Monday, October 25, 1:30 p.m. - 3:30 p.m.
Fowler Hall, Stewart Center
All abstracts are PDFs and can be read with Adobe Acrobat Reader.
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1:30 p.m. |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology
M.V. Fischetti (Invited Speaker), S.E. Laux, P.M. Solomon, and A. Kumar
• abstract
• presentation
(pdf)
IBM SDRC Thomas J. Watson Research Center |
2:00 p.m. |
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs
F. Gámiz, A. Godoy, and C. Sampedro
• abstract
• presentation
(pdf)
Universidad de Granada |
2:15 p.m. |
Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method
G. Pennington, A. Akturk, and N. Goldsman
• abstract
University of Maryland |
2:30 p.m. |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs
S. Yamakawa, S.M. Goodnick, S. Aboud, and M. Saraniti
• abstract
• presentation
(pdf,
pps)
Arizona State University and Illinois Institute of Technology |
2:45 p.m |
3D Monte Carlo Simulation of FinFET using FMM Algorithm
H.R. Khan and D. Vasileska
• abstract
Arizona State University |
3:00 p.m. |
A Self-Consistent Event Biasing Scheme for Statistical Enhancement
M. Nedjalkov, S. Ahmed, and D. Vasileska
• abstract
• presentation
(pdf)
Arizona State University |
3:15 p.m. |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices
P. Dollfus, J.E. Velázquez, A. Bournel, and S. Galdin-Retailleau
• abstract
Université Paris-Sud and Universidad de Salamanca |
3:30 p.m. |
Break |
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