TECHNICAL PROGRAM
SESSION 3: MONTE CARLO

Chairperson: Carlo Jacoboni

Monday, October 25, 1:30 p.m. - 3:30 p.m. Fowler Hall, Stewart Center All abstracts are PDFs and can be read with Adobe Acrobat Reader.
1:30 p.m.	Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology M.V. Fischetti (Invited Speaker), S.E. Laux, P.M. Solomon, and A. Kumar • abstract • presentation (pdf) IBM SDRC Thomas J. Watson Research Center
2:00 p.m.	Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs F. Gámiz, A. Godoy, and C. Sampedro • abstract • presentation (pdf) Universidad de Granada
2:15 p.m.	Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method G. Pennington, A. Akturk, and N. Goldsman • abstract University of Maryland
2:30 p.m.	Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs S. Yamakawa, S.M. Goodnick, S. Aboud, and M. Saraniti • abstract • presentation (pdf, pps) Arizona State University and Illinois Institute of Technology
2:45 p.m	3D Monte Carlo Simulation of FinFET using FMM Algorithm H.R. Khan and D. Vasileska • abstract Arizona State University
3:00 p.m.	A Self-Consistent Event Biasing Scheme for Statistical Enhancement M. Nedjalkov, S. Ahmed, and D. Vasileska • abstract • presentation (pdf) Arizona State University
3:15 p.m.	3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices P. Dollfus, J.E. Velázquez, A. Bournel, and S. Galdin-Retailleau • abstract Université Paris-Sud and Universidad de Salamanca
3:30 p.m.	Break