**[A]** |

Abdallah, N.B. |
P02-01* |
Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method |

Aboud, S. |
S03-04 |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs |

Aboud, S. |
S08-07 |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |

Aboud, S. |
S11-07 |
The Role of Long-Range Forces in Porin Channel Conduction |

Aboud, S. |
P01-20 |
Efficient Memory Management for Cellular Monte Carlo Algorithm |

Aboud, S. |
P01-29 |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems |

Adam-Lema, F. |
S01-06 |
Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks |

Adam-Lema, F. |
S02-06* |
Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study |

Affinito, F. |
S11-06* |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Ahmed, S. |
S01-03 |
Efficient Simulation of the Full Coulomb Interaction in Three Dimensions |

Ahmed, S. |
S03-06 |
A Self-Consistent Event Biasing Scheme for Statistical Enhancement |

Ahmed, S.S. |
P02-02* |
Quantum Potential Approach to Modeling Nano-MOSFETs |

Akis, R. |
P02-24 |
Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures |

Akturk, A. |
S03-03 |
Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method |

Al-Ahmadi, A. |
S10-07 |
Search for Optimum and Scalable COSMOS |

Alam, K. |
S06-04 |
Electronic Properties of Silicon Nanowires |

Alam, M.D. |
S01-05 |
A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability |

Alam, M.D. |
P01-23 |
Monte-Carlo Simulation of Carbon Nanotube Devices |

Alexander, C. |
P01-25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Alexson, D. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Aluru, N.R. |
S11-01 |
Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores |

Anantram, M.P. |
S05-06 |
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism |

Anantram, M.P. |
S08-05 |
Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation |

Ancona, M.G. |
S02-03* |
Multi-Dimensional Tunneling in Density-Gradient Theory |

Andrei, P. |
P01-01* |
Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices |

Asenov, A. |
S01-06 |
Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks |

Asenov, A. |
S02-06 |
Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study |

Asenov, A. |
P01-09 |
RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks |

Asenov, A. |
P01-25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Asenov, A. |
P01-30 |
Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs |

Ashizawa, Y. |
S06-03 |
Analysis of Strained-Si Device Including Quantum Effect |

Ashok, A. |
P02-24* |
Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures |

Asokan, A. |
P01-24* |
Monte Carlo Simulations of Phonon Transport in Silicon |

Aubry-Fortuna, V. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Autran, J.-L. |
S06-05 |
Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism |

**[B]** |

Baccarani, G. |
P02-10 |
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs |

Barker, J. R. |
S01-06 |
Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks |

Barker, J. |
P01-19* |
Smart-Dust: Monte Carlo Simulation of Self-Organised Transport |

Barker, J. |
P02-03* |
Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation |

Barker, J. |
P02-29 |
Hilbert Graph: An Expandable Interconnection for Clusters |

Barmpoutis, A. |
P01-19 |
Smart-Dust: Monte Carlo Simulation of Self-Organised Transport |

Bertoni, A. |
P02-04 |
Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire |

Bertoni, A. |
P02-05 |
Wigner Function for Identical Particles |

Bertoni, A. |
P02-16 |
Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires |

Bescond, M. |
S06-05* |
Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism |

Bigiani, A. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Bordone, P. |
P02-04* |
Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire |

Bordone, P. |
P02-05 |
Wigner Function for Identical Particles |

Bordone, P. |
P02-16 |
Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires |

Bournel, A. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Bournel, A. |
S03-07* |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices |

Boykin, T.B. |
S06-04 |
Electronic Properties of Silicon Nanowires |

Boykin, T.B. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Brandbyge, M. |
P02-08 |
Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires |

Branlard, J. |
S08-07 |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |

Branlard, J. |
P01-20* |
Efficient Memory Management for Cellular Monte Carlo Algorithm |

Brown, A.R. |
S02-06* |
Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study |

Brown, A.R. |
P01-09 |
RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks |

Brown, A. |
P01-25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Brown, A.R. |
P01-30 |
Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs |

Brunetti, R. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Bushby, R.J. |
P02-22 |
Electronic Transport in Discotic Liquid Crystal Columns |

**[C]** |

Cacelli, I. |
S09-05 |
Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts |

Cancellieri, E. |
P02-05* |
Wigner Function for Identical Particles |

Carceller, J.E. |
P01-22 |
An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy |

Carloni, P. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Carrillo, J.A. |
P01-06 |
Accurate Deterministic Numerical Simulation of p-n Junctions |

Cavassilas, N. |
S06-05 |
Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism |

Chassat, C. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Chatterjee, A.N. |
S11-01 |
Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores |

Cheng, C. |
P02-06* |
Spectral Element Method for the Schrödinger-Poisson System |

Cheong, B.H. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Chiney, P. |
S08-07* |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |

Chou, H.M. |
P01-12 |
Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes |

Coppersmith, S.N. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Cosby, R.M. |
P02-25 |
Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings |

Csaba, G. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Csaba, G. |
S10-01* |
Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets |

Csontos, D. |
P01-02 |
Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations |

Csurgay, A. |
S10-01 |
Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets |

Cui, H.L. |
**P02-15** |
Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations |

**[D]** |

Damle, P. |
S09-04 |
First-Principles Modeling of Molecular I-Vs and Calibration to Experiments |

Datta, S. |
S05-01* |
The NEGF Method: Capabilities and Challenges |

Datta, S. |
S05-06 |
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism |

Datta, S. |
S09-02 |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Datta, S. |
S09-04 |
First-Principles Modeling of Molecular I-Vs and Calibration to Experiments |

Datta, S. |
P02-20 |
A Microscopic Quantum Simulation
of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors |

Datta, S. |
P02-23 |
Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon |

Decker, S. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Di Carlo, A. |
S05-07 |
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices |

Di Carlo, A. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Di Carlo, A. |
S09-03 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Dollfus, P. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Dollfus, P. |
S03-07* |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices |

Dollfus, P. |
P02-18 |
From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices |

Domaingo, A. |
P01-03* |
Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System |

Donarini, A. |
S05-05 |
Modeling of Quantum Nanomechanics |

Du, G. |
P01-21* |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation |

Duffy, C. |
P01-04* |
Scaling pFET Hot-Electron Injection |

Dutta, M. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Dutta, M. |
S09-06 |
Acoustic and Optical Phonons in Nanotubes |

**[E]** |

Eisenberg, R. |
S11-07 |
The Role of Long-Range Forces in Porin Channel Conduction |

Eisenberg, R. |
P01-29 |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems |

Erikson, M.A. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Erlen, C. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

**[F]** |

Fedoseyev, A. |
P01-05* |
Robust Computational Models of Quantum Transport in Electronic Devices |

Ferrari, G. |
P02-05 |
Wigner Function for Identical Particles |

Ferretti, A. |
S09-05 |
Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts |

Ferry, D.K. |
S05-02 |
Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues |

Ferry, D.K. |
S05-03 |
A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures |

Ferry, D.K. |
P02-24 |
Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures |

Fiori, G. |
P02-07* |
Code for the 3D Simulation of Nanoscale Semiconductor Devices, including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling |

Fisher, J.M.. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Fischetti, M.V. |
S03-01* |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology |

Flindt, C. |
S05-05 |
Modeling of Quantum Nanomechanics |

Frauenheim, T. |
S09-03 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Frederiksen, T. |
P02-08* |
Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires |

Friesen, M. |
S11-07 |
The Role of Long-Range Forces in Porin Channel Conduction |

**[G]** |

Gagliardi, A. |
S09-03 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Galdin, S. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Galdin, S. |
P02-18 |
From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices |

Galdin-Retailleau, S. |
S03-07 |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices |

Gamba, I.M. |
P02-19 |
A High Order Local Solver for Wigner Equation |

Gámiz, F. |
S03-02* |
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs |

Gámiz, F. |
P01-06 |
Accurate Deterministic Numerical Simulation of p-n Junctions |

Gehring, A. |
S01-01* |
Evolution of Current Transport Models for Engineering Applications |

Gehring, A. |
P02-09* |
Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs using the Monte Carlo Method |

Gehring, A. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Ghosh, A.W. |
S09-02 |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Ghosh, A. |
S09-04 |
First-Principles Modeling of Molecular I-Vs and Calibration to Experiments |

Ghosh, A. |
P01-17 |
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers |

Ghosh, A. |
P02-20 |
A Microscopic Quantum Simulation
of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors |

Ghosh, A. |
P02-21 |
Atomistic Treatment of Nanotube-Metal Interfaces |

Ghosh, A. |
P02-23 |
Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon |

Gilbert, M.J. |
S05-02 |
Full Quantum Mechanical Simulation of Ultra-Small Silicon Devices in Three-Dimensions: Physics and Issues |

Giles, M.D. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Giles, M.D. |
S02-01* |
TCAD Process/Device Modeling Challenges and Opportunities for the Next Decade |

Girlanda, M. |
S09-05* |
Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts |

Gnani, E. |
P02-10* |
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs |

Godoy, A. |
S03-02 |
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs |

Godoy, A. |
P01-06* |
Accurate Deterministic Numerical Simulation of p-n Junctions |

Goldsman, N. |
S03-03 |
Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method |

Gómez-Campos, F.M. |
P01-22* |
An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy |

González, P. |
P01-06 |
Accurate Deterministic Numerical Simulation of p-n Junctions |

Goodnick, S.M. |
S03-04 |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs |

Goodnick, S. |
S08-07 |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |

Goodnick, S. |
P01-20 |
Efficient Memory Management for Cellular Monte Carlo Algorithm |

Grasser, T. |
S02-02* |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Guo, J. |
S05-06* |
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism |

Guo, J. |
P01-16 |
Electrostatics of 3D Carbon Nanotube Field-Effect Transistors |

Guo, J. |
P01-23 |
Monte-Carlo Simulation of Carbon Nanotube Devices |

**[H]** |

Hagenbeck, R. |
P01-07* |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Haibach, P. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Han, R. |
P01-21 |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation |

Harrer, S. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Harrison, P. |
P02-31 |
On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures |

Hasan, S. |
S08-06 |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |

Hasan, S. |
P01-23* |
Monte-Carlo Simulation of Carbon Nanotube Devices |

Hassler, P. |
P01-04 |
Scaling pFET Hot-Electron Injection |

He, J. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Hedin, E.R. |
P02-25 |
Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings |

Heitzinger, C. |
S01-03* |
Efficient Simulation of the Full Coulomb Interaction in Three Dimensions |

Hess, K. |
**S08-01*** |
Progress and Issues in the Simulation of Quantum Well Lasers |

Hess, K. |
S11-02 |
An Application of Shockleyís Recombination and Generation Theory to Biological Ion Channels |

Hesto, P. |
P02-18 |
From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices |

Hu, S. |
S11-02* |
An Application of Shockleyís Recombination and Generation Theory to Biological Ion Channels |

**[I]** |

Iannaccone, G. |
S02-05* |
Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors |

Iannaccone, G. |
P02-07 |
Code for the 3D Simulation of Nanoscale Semiconductor Devices, including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling |

Ikonic, Z. |
P02-31* |
On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures |

Isler, M. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

**[J]** |

Jacoboni, C. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Jacoboni, C. |
P02-04 |
Simulation of Entanglement Dynamics for a Scattering between a Free and a Bound Carrier in a Quantum Wire |

Jacoboni, C. |
P02-05 |
Wigner Function for Identical Particles |

Jacoboni, C. |
P02-16 |
Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires |

Jauho, A.-P. |
S05-05* |
Modeling of Quantum Nanomechanics |

Jauho, A.-P. |
P02-08 |
Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires |

Joe, Y.S. |
P02-25* |
Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings |

Joe, Y.S. |
P02-30 |
Manipulating of Resonances in Conductance of an Electron Waveguide with Antidots |

Joseph, S. |
S11-01* |
Hierarchical Multiscale Computations of Ion Transport in Synthetic Nanopores |

Jungemann, C. |
S01-02* |
A Legendre Polynomial Solver for the Langevin Boltzmann Equation |

Jungemann, C. |
S02-02 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Jungemann, C. |
S02-04 |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_{1-x}Ge_{x},
Dual Channel pMOSFETs on (001) Relaxes Si_{1-y}Ge_{y} |

**[K]** |

Kamakura, Y. |
P02-17 |
Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures |

Kan, E.C. |
P02-12 |
A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches |

Kathawala, G. |
S08-06 |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |

Kathawala, G. |
S11-03 |
Simulation of Ion Conduction in the *ompF* Porin Channel using BioMOCA |

Kaya, S. |
S10-07* |
Search for Optimum and Scalable COSMOS |

Kaya, S. |
P01-14 |
RF Performance of Strained SiGe pMOSFETs: Linearity and Gain |

Kaya, S. |
P01-31 |
Electro-Chemical Modeling Challenges of Biological Ion Pumps |

Kelsall, R.W. |
P01-24 |
Monte Carlo Simulations of Phonon Transport in Silicon |

Kelsall, R.W. |
P02-22 |
Electronic Transport in Discotic Liquid Crystal Columns |

Kelsall, R.W. |
P02-31 |
On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Dots in Cascade Structures |

Khan, H.R. |
S03-05* |
3D Monte Carlo Simulation of FinFET using FMM Algorithm |

Khan, T. |
P01-08* |
Subthreshold Mobility Extraction for SOI-MESFETs |

Knezevic, I. |
S05-03* |
A Quantum Many-Body Density Matrix Model for Sub-Femtosecond Transport in Mesoscopic Structures |

Kienle, D. |
P02-21* |
Atomistic Treatment of Nanotube-Metal Interfaces |

Kim, J.S. |
P02-25 |
Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings |

Klimeck, G. |
S06-04 |
Electronic Properties of Silicon Nanowires |

Klimeck, G. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Kohanpour, B. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Kosik, R. |
S02-02 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Kosina, H. |
S02-02 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Kosina, H. |
P02-09 |
Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs using the Monte Carlo Method |

Kosina, H. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Krishnan, S. |
S08-03* |
A Self-Consistent Quantum Mechanical Simulation of P-Channel Strained SiGe MOSFETs |

Krishnan, S. |
P01-27 |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach |

Kufluoglu, H. |
S01-05 |
A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability |

Kumar, A. |
S03-01* |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology |

**[L]** |

Labukhin, D. |
P02-32* |
Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection through Parallel Computing |

Laino, V. |
abstract |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Lake, R. |
S06-04 |
Electronic Properties of Silicon Nanowires |

Lannoo, M. |
S06-05 |
Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism |

Latessa, L. |
S05-07* |
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices |

Latessa, L. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Lau, F. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Laux, S.E. |
S03-01* |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology |

Laux, S.E. |
S06-01* |
Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples |

Leburton, J.-P. |
S10-03 |
Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out |

Lee, A. |
P01-09* |
RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks |

Lee, J.-W. |
P01-10* |
Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs |

Lee, J.-W. |
P01-11* |
Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors |

Lee, J.-W. |
P01-12 |
Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes |

Lee, K.-I. |
S11-03* |
Simulation of Ion Conduction in the *ompF* Porin Channel using BioMOCA |

Lee, S. |
S10-02* |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Lee, S. |
P02-34 |
Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots |

Lent, C.S. |
S10-04 |
Theoretical Study of Molecular Quantum Dot Cellular Automata |

Lent, C.S. |
S10-05 |
Bennett and Landauer Clocking in Quantum-Dot Cellular Automata |

Lever, L. |
P02-22* |
Electronic Transport in Discotic Liquid Crystal Columns |

Li, X. |
P02-32 |
Three-Dimensional Finite-Difference Time-Domain Simulation of Facet Reflection through Parallel Computing |

Li, Y. |
P02-26* |
Computer Simulation of Magnetization for Vertically Coupled Nanoscaole Quantum Rings |

Li, Y. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Li, Y. |
S11-04* |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes |

Li, Y. |
P01-10* |
Silicon-Germanium Structure in Surrounding-Gate Strained Silicon Nanowire FETs |

Li, Y. |
P01-11 |
Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors |

Li, Y. |
P01-12* |
Simulation of Three-Dimensional Copper-Low-κ Interconnections with Different Shapes |

Li, Y. |
P01-13* |
A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors |

Li, Y. |
P01-18 |
A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era |

Li, Y. |
P01-28* |
A Comparative Study of Numerical Algorithms in Calculating Eigenpairs of the Master Equation for Protein Folding Kinetics |

Liang, G.-C. |
S09-04 |
First-Principles Modeling of Molecular I-Vs and Calibration to Experiments |

Liang, G. |
P02-23* |
Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon |

Lilja, K. |
S02-03 |
Multi-Dimensional Tunneling in Density-Gradient Theory |

Lin, H.Y. |
P01-11 |
Investigation of Electrostatic Discharge Characteristics on Low Temperature Polycrystalline Silicon Thin Film Transistors |

Liu, M. |
S10-05 |
Bennett and Landauer Clocking in Quantum-Dot Cellular Automata |

Liu, Q.H. |
P02-06 |
Spectral Element Method for the Schrödinger-Poisson System |

Liu, X. |
P01-21 |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation |

Liu, Y. |
P01-13B* |
Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results |

Lorente, N. |
P02-08 |
Modeling of Inelastic Transport in One-Dimensional Metallic Atomic Wires |

Lu, D. |
S11-04 |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes |

Lu, Y. |
S10-04* |
Theoretical Study of Molecular Quantum Dot Cellular Automata |

Lugli, P. |
S05-07 |
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices |

Lugli, P. |
S09-01* |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Lugli, P. |
S09-03 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Lugli, P. |
S10-01 |
Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets |

Luisier, M. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Lundstrom, M. |
S05-06 |
Atomistic Simulation of Carbon Nanotube Field-Effect Transistors using Non-Equilibrium Green's Function Formalism |

Lundstrom, M. |
S08-06 |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |

Lundstrom, M. |
P01-16 |
Electrostatics of 3D Carbon Nanotube Field-Effect Transistors |

Lundstrom, M. |
P01-17 |
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers |

Lundstrom, M. |
P01-23 |
Monte-Carlo Simulation of Carbon Nanotube Devices |

Lundstrom, M. |
P02-20 |
A Microscopic Quantum Simulation
of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors |

Lundstrom, M. |
P02-21 |
Atomistic Treatment of Nanotube-Metal Interfaces |

**[M]** |

Ma, W. |
P01-14* |
RF Performance of Strained SiGe pMOSFETs: Linearity and Gain |

Macucci, M. |
S09-05 |
Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts |

Macucci, M. |
P02-11* |
High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices |

Mamaluy, D. |
S06-02 |
Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices |

Marconcini, P. |
P02-11 |
High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices |

Marreiro, D. |
S11-07 |
The Role of Long-Range Forces in Porin Channel Conduction |

Marreiro, D. |
P01-29* |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems |

Martinez, A. |
P02-03 |
Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation |

Massoud, H.Z. |
P02-06 |
Spectral Element Method for the Schrödinger-Poisson System |

Matagne, P. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Matsuda, K. |
P01-15 |
Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon |

Mayergoyz, I. |
P01-01 |
Random Doping Fluctuations of Small-Signal Parameters in Nanoscale Semiconductor Devices |

Mayergoyz, I.D. |
P02-27* |
Modeling of the Electrostatic (Plasmon) Resonances In Metallic and Semiconductor Nanoparticles |

Meinerzhagen, B. |
S01-02 |
A Legendre Polynomial Solver for the Langevin Boltzmann Equation |

Meinerzhagen, B. |
S02-02 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Meinerzhagen, B. |
S02-04 |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_{1-x}Ge_{x},
Dual Channel pMOSFETs on (001) Relaxes Si_{1-y}Ge_{y} |

Melnikov, D. |
S10-03 |
Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out |

Mikolajick, T. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Millar, C. |
P01-30* |
Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs |

Miyoshi, T. |
S08-05 |
Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation |

Mori, N. |
S08-04* |
Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs |

Mori, N. |
P02-13 |
Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors |

Mouis, N.. |
P02-01 |
Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method |

Munteanu, D. |
S06-05 |
Treatment of Point Defects in Nanowire MOSFETs using the Nonequilibrium Green's Function Formalism |

**[N]** |

Narayanan, N. |
P02-12* |
A Critical Examination of the Basis of Macroscopic Quantum Transport Approaches |

Nedjalkov, M. |
S03-06* |
A Self-Consistent Event Biasing Scheme for Statistical Enhancement |

Negulescu, C. |
P02-01 |
Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method |

Neophytou, N. |
P01-16 |
Electrostatics of 3D Carbon Nanotube Field-Effect Transistors |

Nguyen, C.D. |
S02-04* |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_{1-x}Ge_{x},
Dual Channel pMOSFETs on (001) Relaxes Si_{1-y}Ge_{y} |

Niehaus, T. |
S09-03 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Novotny, T. |
S05-05 |
Modeling of Quantum Nanomechanics |

**[O]** |

Obradovic, B. |
S01-04* |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Odermatt, S. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Ogawa, M. |
S08-05 |
Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation |

Oka, H. |
S06-03 |
Analysis of Strained-Si Device Including Quantum Effect |

Okamoto, M. |
P02-13* |
Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors |

Oyafuso, F. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

Oyafuso, F. |
P02-34 |
Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots |

**[P]** |

Park, W.J. |
S11-03 |
Simulation of Ion Conduction in the *ompF* Porin Channel using BioMOCA |

Park, W.J. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Paulsson, M. |
S09-02 |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Pavlov, B.S. |
**P02-28*** |
Resonance Spin Filter |

Pecchia, A. |
S05-07 |
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices |

Pecchia, A. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Pecchia, A. |
S09-03* |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions |

Pennington, G. |
S03-03* |
Phonon-Limited Transport in Carbon Nanotubes Using the Monte Carlo Method |

Pham, A.T. |
S02-04 |
TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_{1-x}Ge_{x},
Dual Channel pMOSFETs on (001) Relaxes Si_{1-y}Ge_{y} |

Piccinini, E. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Polizzi, E. |
S05-04* |
Numerical Parallel Algorithms for Large-Scale Nanoelectronics Simulations using NESSIE |

Polizzi, E. |
S09-02 |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Polizzi, E. |
P02-01 |
Simulation Schemes in 2D Nanoscale MOSFET's: WKB Based Method |

Polizzi, E. |
P02-20 |
A Microscopic Quantum Simulation
of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors |

Porod, W. |
S10-01 |
Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets |

Pourfath, M. |
P02-14* |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Przekwas, A. |
P01-05* |
Robust Computational Models of Quantum Transport in Electronic Devices |

**[R]** |

Rahman, A. |
P01-17 |
Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers |

Raichura, A. |
S09-06 |
Acoustic and Optical Phonons in Nanotubes |

Rakowski, R.F. |
P01-31* |
Electro-Chemical Modeling Challenges of Biological Ion Pumps |

Rakshit, T. |
S09-04* |
First-Principles Modeling of Molecular I-Vs and Calibration to Experiments |

Rakshit, T. |
P02-23 |
Hybrid- Basis Modeling of Electron Transport through Molecules on Silicon |

Ramadurai, D. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Ravaioli, U. |
S08-06 |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |

Ravaioli, U. |
S11-03 |
Simulation of Ion Conduction in the *ompF* Porin Channel using BioMOCA |

Ravaioli, U. |
S11-04 |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes |

Ravaioli, U. |
S11-05 |
A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels |

Ravishankar, R. |
S08-06* |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs |

Raychowdhury, A. |
S10-06 |
Circuit Modeling of Carbon Nanotube Interconnects and Their Performance Estimation in VLSI Design |

Recine, G. |
**P02-15*** |
Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations |

Reggiani, S. |
P02-10 |
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs |

Riddet, C. |
P01-25* |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Ringhofer, C. |
S01-03 |
Efficient Simulation of the Full Coulomb Interaction in Three Dimensions |

Ringhofer, C. |
P02-02 |
Quantum Potential Approach to Modeling Nano-MOSFETs |

Rivas, C. |
S06-04 |
Electronic Properties of Silicon Nanowires |

Rodríguez-Bolívar, S. |
P01-22 |
An Improved Monte Carlo Algorithm for Ionized Impurity Scattering in Bands with Warping, Non-parabolicity and Degeneracy |

Rodríguez-Salazar, F. |
P02-29* |
Hilbert Graph: An Expandable Interconnection for Clusters |

Rosini, M. |
P02-16* |
Single Electron Transport and Entanglement Induced by a Surface Acoustic Waves versus Free Ballistic Propagation in Coupled Quantum Wires |

Rossen, R. |
**P02-15** |
Examination of Boundary Effects of Resonant Tunneling Structures using Lattice Weyl-Wigner Transport Simulations |

Rotkin, S.V. |
S11-04 |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes |

Roy, G. |
S02-06 |
Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study |

Roy, K. |
S10-06 |
Circuit Modeling of Carbon Nanotube Interconnects and Their Performance Estimation in VLSI Design |

Roy, S. |
S02-06 |
Intrinsic Parameter Fluctuations in Conventional MOSFET's at the Scaling Limit: A Statistical Study |

Roy, S. |
P01-09 |
RTS Amplitudes in Decanano n-MOSFETS with Conventional and High-k Gate Stacks |

Roy, S. |
P01-25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Roy, S. |
P01-30 |
Tracking the Propagation of Individual Ions through Ion Channels with Nano-MOSFETs |

Royo, P. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Rudan, M. |
S11-06 |
A Simulative Method for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches |

Rudan, M. |
P02-10 |
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs |

**[S]** |

Sabathil, M. |
S06-02 |
Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices |

Saini, V. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Saint Martin, J. |
S01-07 |
Influence of Ballistic Effects in Ultra-Small MOSFETs |

Sakai, A. |
P02-17* |
Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures |

Sameh, A. |
S05-04 |
Numerical Parallel Algorithms for Large-Scale Nanoelectronics Simulations using NESSIE |

Sampedro, C. |
S03-02 |
Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs |

Saraniti, M. |
S03-04 |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs |

Saraniti, M. |
S08-07 |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs |

Saraniti, M. |
S11-07 |
The Role of Long-Range Forces in Porin Channel Conduction |

Saraniti, M. |
P01-20 |
Efficient Memory Management for Cellular Monte Carlo Algorithm |

Saraniti, M. |
P01-29 |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems |

Satanin, A.M. |
P02-25 |
Fano Resonances through Quantum Dots in Tunable Aharonov-Bohm Rings |

Satanin, A.M. |
P02-30* |
Manipulating of Resonances in Conductance of an Electron Waveguide with Antidots |

Scarpa, G. |
S09-01 |
The Simulation of Molecular and Organic Devices: A Critical Review and a Look at Future Development |

Schulten, K. |
S11-04 |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes |

Schürrer, F. |
P01-03* |
Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System |

Sée, J. |
P02-18* |
From Wave-Functions to Current-Voltage Characteristics in Silicon Single Nanocyrstal Coulomb Blockade Devices |

Selberherr, S. |
S01-01 |
Evolution of Current Transport Models for Engineering Applications |

Selberherr, S. |
S02-02 |
A Non-Parabolic Six Moments Model for the Simulation of Sub-100nm Devices |

Selberherr, S. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

Sethuraman, A. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Shi, J. |
P02-19* |
A High Order Local Solver for Wigner Equation |

Shi, P. |
P02-33 |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Shifren, L. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Shu, C.W. |
P01-13B |
Local Discontinuous Galerkin Methods for Moment Models in Device Simulations: Formulation and One Dimensional Results |

Siddiqui, L. |
S09-02 |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Solomon, P.M. |
S03-01* |
Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and to Mainstream VLSI Technology |

Stettler, M. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Streiff, M. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Stroscio, M.A. |
S09-06 |
Acoustic and Optical Phonons in Nanotubes |

Stroscio, M.A. |
P02-33* |
Tunable Optical Properties of Colloidal Quantum Dots in Electrolytic Environments |

Svizhenko, A. |
S08-05 |
Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation |

**[T]** |

Takeda, H. |
S08-04* |
Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs |

Tanabe, R. |
S06-03* |
Analysis of Strained-Si Device Including Quantum Effect |

Tang, T.-W. |
P01-26 |
The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation |

Taniguchi, K. |
P02-17 |
Quantum Lattice-Gas Automata Simulation of Electronic Wave Propagation in Nanostructures |

Tempel, G. |
P01-07 |
Modeling and Simulation of Electron Injection during Programming in Twin FlashTM Devices Based on Energy Transport and the Non-Local Lucky Electron Concept |

Thornton, T.J. |
P01-08 |
Subthreshold Mobility Extraction for SOI-MESFETs |

Tsuchiya |
S08-05* |
Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation |

Turowski, M. |
P01-05* |
Robust Computational Models of Quantum Transport in Electronic Devices |

**[U]** |

Ulloa, S. |
P01-02 |
Modeling of Transport through Semiconductor Quantum Dots: An Approach Based on the Direct Solution of the Coupled Poisson-Boltzmann Equations |

Ungersboeck, E. |
P02-14 |
Numerical Analysis of Coaxial Double Gate Schotttky Barrier Carbon Nanotube Field Effect Transistors |

**[V]** |

Vaidyanathan, M. |
P01-23 |
Monte-Carlo Simulation of Carbon Nanotube Devices |

van der Straaten, T.A. |
S11-03 |
Simulation of Ion Conduction in the *ompF* Porin Channel using BioMOCA |

van der Straaten, T.A. |
S11-05 |
A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels |

Van Schilfgaarde, M. |
P01-27 |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach |

Vasileska, D. |
S01-03 |
Efficient Simulation of the Full Coulomb Interaction in Three Dimensions |

Vasileska, D. |
S03-05 |
3D Monte Carlo Simulation of FinFET using FMM Algorithm |

Vasileska, D. |
S03-06 |
A Self-Consistent Event Biasing Scheme for Statistical Enhancement |

Vasileska, D. |
S08-03 |
A Self-Consistent Quantum Mechanical Simulation of P-Channel Strained SiGe MOSFETs |

Vasileska, D. |
P01-08 |
Subthreshold Mobility Extraction for SOI-MESFETs |

Vasileska, D. |
P01-27 |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach |

Vasileska, D. |
P02-02 |
Quantum Potential Approach to Modeling Nano-MOSFETs |

Vasileska, D |
P02-24 |
Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split- Gate Heterostructures |

Velázquez, J.E. |
S03-07 |
3D Monte Carlo Analysis of Discrete Dopant Effects on Electron Noise in Si Devices |

Vez, D. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Vogl, P. |
S06-02 |
Self-Consistent Contact Block Reduction Method for Ballistic Nanodevices |

von Allmen, P. |
S10-02 |
Electron Exchange Interaction in Electronically Confined Si Quantum Dots |

von Allmen, P. |
P02-34* |
Electronic Structure and Optical Transitions in InAsSb/InGaAs Quantum Dots |

**[W]** |

Wang, J. |
P02-20* |
A Microscopic Quantum Simulation
of Si/SiO2 Interface Roughness Scattering in Silicon Nanowire Transistors |

Wang, X. |
S01-04 |
A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement |

Wartak, M.S. |
P01-05* |
Robust Computational Models of Quantum Transport in Electronic Devices |

Watling, J.R. |
S01-06 |
Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks |

Watling, J.R. |
P01-25 |
Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study |

Witzig, A. |
S08-02 |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Witzigmann, B. |
S08-02* |
Comprehensive Simulation of Vertical Cavity Surface Emiting Lasers |

Wu, B. |
P01-26 |
The Effective Conduction-Band Edge Method of Quantum Correction to the Monte Carlo Device Simulation |

**[X]** |

Xia, Z. |
P01-21 |
Simulation of Si and Ge UTB MOSFETs using Monte Carlo Method Based on the Quantum Boltzmann Equation |

Xu, J. |
P01-27 |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach |

**[Y]** |

Yafyasov, A.M. |
**P02-28** |
Resonance Spin Filter |

Yamakawa, S. |
S03-04* |
Quantum Corrected Full-Band Cellular Monte Carlo Simulation of AIGaN/GaN HEMTs |

Yamasaki, T. |
S06-03 |
Analysis of Strained-Si Device Including Quantum Effect |

Yang, L. |
S01-06* |
Simulations of Sub-100nm Strained Si MOSFETs with High-κ Gate Stacks |

Yang, Z. |
S11-05 |
A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels |

Yu, S.-M. |
P01-13 |
A Novel Approach to Compact Model Parameter Extraction for Excimer Laser Annealed Complementary Thin Film Transistors |

Yu, S.-M. |
P01-18* |
A Computational Intelligent Optical Proximity Correction for Process Distortion Compensation of Layout Mask in Subwavelength Era |

**[Z]** |

Zahid, F. |
S09-02* |
Huckel I-V 3.0: A Self-Consistent Model for Molecular Transport and its Applications |

Zhang, L. |
S10-03 |
Simulation and Optimization of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out |

Zhang, Z. |
P02-27 |
Modeling of the Electrostatic (Plasmon) Resonances In Metallic and Semiconductor Nanoparticles |

Zheng, Y. |
S06-04* |
Electronic Properties of Silicon Nanowires |

Zorman, B. |
P01-27* |
Monte Carlo Hole Mobility Calculations with a First Principles Alloy Scattering Approach |