International Workshop on
Computational
Electronics (IWCE-9)
25-28 May
2003
PROGRAM
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Sunday, 25 May 2003 |
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Sun. 18.00-21.00 |
Registration |
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Sun. 19.00-21.00 |
WELCOMING PARTY |
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Monday,
26 May 2003 NanoMOS 1 |
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Mon. 8.45-9.00 |
Prof. Alessandro Finazzi Agrò, Rector of the University of Rome “Tor Vergata”Prof. Nicola Vittorio, Dean of the Faculty of Natural ScienceProf. Franco Giannini, Head of the Department
of Electronic Engineering
Welcome address |
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Mon.
9.00-9.30 |
M.
Fischetti (invited) IBM Research
Division, Thomas J. Watson Research Center Yorktown Heights Scaling MOSFETs to the limit: A physicist’s perspective |
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Mon. 9.30-9.45 |
F. M. Bufler, A. Schenk and W.
Fichtner Institut fur Integrierte Systeme, ETH Zurich Monte Carlo, Hydrodynamic and
Drift–Diffusion Simulation of Scaled Double–Gate MOSFETs |
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Mon. 9.45-10.00 |
G. Kathawala
and U. Ravaioli Beckman
Institute, University of Illinois at Urbana-Champaign Comparison of Double-Gate MOSFETs and
FinFETs with Monte Carlo Simulation |
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Mon. 10.00-10.15 |
Hideaki
Tsuchiya, Motoki Horino and Tanroku Miyoshi Department of
Electrical and Electronics Engineering, Kobe University Quantum Monte Carlo Device Simulation of
Nano-Scaled SOI-MOSFETs |
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Mon. 10.15-10.30 |
G.
Fiori, G. Iannaccone Dipartimento
di Ingegneria dell'Informazione, Università di Pisa "Atomistic", quantum and
ballisticeffects in sub-100nm "well tempered" MOSFET |
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Mon. 10.30-11.00 |
COFFEE BREAK |
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Monday,
26 May 2003 |
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Mon. 11.00-11.15 |
L.
Bonci, M. Macucci, D. Guan, U. Ravaioli Dipartimento
di Ingegneria dell'Informazione, Università di Pisa Numerical analysis of tunneling between stacked quantum wires
with the inclusion of the effects form effective mass discontinuities |
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Mon. 11.15-11.30 |
Ting-wei Tang and Bo Wu Department of
Electrical and computer Engineering, University of Massachusetts Quantum Correction for the Monte Carlo
Simulation via the Bohm Potential |
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Mon. 11.30-11.45 |
Andrea Bertoni, Paolo Bordone, Giulio Ferrari,
Nicoletta Giacobbi, Carlo Jacoboni S3
Research Center, Istituto Nazionale per la Fisica della Materia Proximity effect of the contacts in
electron transport in mesoscopic devices |
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Mon. 11.45-12.00 |
R.Proietti
Zaccaria, F.Rossi INFM
e Dipartimento di Fisica, Politecnico di Torino Generalized wigner function formulation
for quantum systems with open boundaries |
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Mon. 12.15-12.20 |
H. Kosina, M. Nedjalkov, and S. Selberherr Institute for
Microelectronics, TU Vienna A Monte Carlo Method Seamlessly Linking
Quantum and Classical Transport Calculations |
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Mon. 12.30-12.45 |
Gerhard
Klimeck, Phillip Stout and R. Chris Bowen Jet Propulsion
Laboratory, California Institute of Technology Quantum and semi-classical transport in
RTDs using NEMO 1-D |
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Mon. 12.45-14.00 |
LUNCH BREAK |
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Monday, 26 May 2003 |
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Mon. 14.00-14.30 |
Jason
Ayubi-Moak, Shela Wigger, Stephen Goodnick and Marco Saraniti (invited) Department
of Electrical Engineering, Arizona State University and Illinois Institute of Technology Coupling Maxwell’s Equations to Full Band
Particle -Based Simulators |
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Mon. 14.30-14.45 |
A. Wacker,
S.-C. Lee, and M. F. Pereira Institut fur Theoretische Physik, Technische Universitat Berlin Quantum Transport and Gain
in Quantum Cascade Lasers |
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Mon. 14.45-15.00 |
R. C.
Iotti, F. Rossi Dipartimento
di Fisica, Politecnico di Torino Microscopic modelling of opto-electronic
quantum devices: A predictive simulation tool |
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Mon. 15.00-15.15 |
G.Csaba,
W.Porod Center for Nano
Science and Technology, Department of Electrical Engineering, University of
Notre Dame Restoration of magnetization
distributions from joint magnetic force microscopy measurements and
micromagnetic simulations |
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Special Section: Web Based Simulations |
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Mon. 15.15-15.45 |
Phantoms HUB: M. Macucci ICODE: F. Compagnone |
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Mon. 15.45-16.00 |
COFFEE BREAK |
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Mon. 16.00-18.30 |
POSTER SESSION With wine
tasting and traditional snacks |
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Tuesday, 27 May 2003 |
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Tue.
8.45-9.15 |
A. Svizhenko, A. Maiti and M. P. Anantram (invited) NASA Ames
Research Center Modeling of the electro-mechanical
response of carbon nanotubes: Molecular Dynamics and Transport Calculations |
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Tue. 9.15-9.45 |
T. van der Straaten, G. Kathawala and U. Ravaioli (invited) Beckman
Institute, University of Illinois at Urbana-Champaign A Transport Monte Carlo Simulation Model
for Ionic Channels |
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Tue. 9.45-10.00 |
Sheila
Aboud, Marco Saraniti, R. Eisenberg Molecular
Biophysics Dept., Rush University and Illinois Institute of Technology Computation issues in modeling ion
transport in biological channel: Self-consistent particle based simulations |
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Tue. 10.00-10.15 |
R. Eisenberg Molecular
Biophysics Dept., Rush University Understanding BioMolecules by Reverse
Engineering |
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Tue. 10.15-10.30 |
C.Millar,
A.Asenov and S.Roy Device
Modelling Group, Department of Electronics and Electrical Engineering,
Glasgow University Brownian Ionic Channel Simulation |
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Mon. 10.30-11.00 |
COFFEE BREAK |
Tuesday, 27 May 2003 |
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Tue. 11.00-11.30 |
T. Ezaki (invited) Silicon systems research laboratories, NEC Corporation Sub-100nm MOSFET simulation based on fully 2D quantization of
electrons |
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Tue. 11.30-11.45 |
S.E. Laux, A.
Kumar and M.V. Fischetti IBM Research
Division, Thomas J. Watson Research Center
Does Circulation in Individual Current
States Survive in the Total Current Density? |
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Tue. 11.45-12.00 |
Hiroshi Nakatsuji, Yoshinari Kamakura, Kenji Tanichi Department of
electronics and information systems, Osaka University Full band Monte Carlo simulation of
two-dimensional hole transport in strained si p-MOSFETs |
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Tue. 12.00-12.15 |
M. P. Anantram
and Alexei Svizhenko Center for
Nanotechnology, NASA Ames Research Center Role of Phonon Scattering in
Nanotransistors |
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Tue. 12.15-12.30 |
C.Ringofer,
D.Vasileska Department of
mathematics, Arizona State University Effective potential approach to modeling
of 25nm MOSFET devices |
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Tue. 12.30-12.45 |
H. Takeda, N.
Mori, and C. Hamaguchi Department of
Electronic Engineering, Osaka University Quantum effects on transport
characteristics in ultra-small MOSFETs |
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Tue. 12.45-14.00 |
LUNCH BREAK |
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Tuesday, 27 May 2003 |
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Tue. 14.00-14.30 |
M. Lundstrom (invited) Purdue University Modal methods for
Quantum Modeling of Semiconductor Devices |
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Tue. 14.30-14.45 |
John R. Barker Department of
Electronics and Electrical Engineering, University of Glasgow Green function simulation study of non
self-averaging scattering processes in atomistic semiconductor devices |
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Tue. 14.45-15.00 |
M. Boriçi J. R.
Watling, R. Wilkins, and J. R. Barker Department of
Electronics and Electrical Engineering, University of Glasgow A non perturbative model of surface
roughness scattering for Monte Carlo simulation of relaxed silicon n-MOSFETs |
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Tue. 15.00-15.15 |
C. Hamaguchi Dept.
Electronic Engineering, Osaka University High electron mobility limited by remote
impurity scattering |
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Tue.
15.15-15.30 |
E.
Ciancio, R. C: Iotti, F. Rossi Dipartimento
di Fisica, Politecnico di Torino Gauge invariant formulation of Fermi's
Golden Rule: Application to high field transport in semiconductors |
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Tue 15.30-23.00 |
EXCURSION AND SOCIAL DINNER |
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Wednesday, 28 May 2003 |
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Wed.
8.45-9.15 |
A. Fisher
(invited)
Department of Physics and Astronomy, University College The role of
phonons in molecular electronics: coherent and incoherent transport |
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Wed.
9.15-9.45 |
Otto F.
Sankey1 , Jun Li1, Gil Speyer2, and John
Tomfohr1, (invited) 1Department of Physics and Astronomy, 2Department
of Electrical Engineering Arizona State University Theoretical aspects of tunneling current
through single molecules |
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Wed. 9.45-10.00 |
Alessandro
Pecchia, Marieta Gheorghe, Luca Latessa, Aldo Di Carlo. Dipartimento
di Ingegneria Elettronica, Universita` di Roma "Tor Vergata" Coherent and
incoherent transport through molecular devices |
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Wed.
10.00-10.15 |
Christophe
Adessi, Steven P. Walch and M. P. Anantram LPMCN, Universite Claude Bernard Kyon DNA Conductance Modeling |
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Wed. 10.15-10.30 |
A. Calzolari,
R. Di Felice, and E. Molinari INFM - National Research Center on nanoStructures and bioSystems at
Surfaces (S3) and
Dipartimento di Fisica, Università di Modena e Reggio Emilia Computer
Simulation of Biomolecular Nanostructures |
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Wed.
10.30-11.00 |
COFFEE BREAK |
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Wednesday, 28 May 2003 |
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Wed. 11.00-11.30 |
S.Picozzi,
R.Asahi, A.J. Freeman (invited) INFM - Dipartimento di Fisica, Università degli Studi L'Aquila Accurate First Principles detailed
balance determination of auger recombination and impact ionization rates in
semiconductors |
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Wed.
11.30-11.45 |
Y.
Kazami, D. Kasai, Y. Mitani and K. Horio Faculty of
Systems Engineering, Shibaura Institute of Technology Simulation of Lag Phenomena and Pulsed
I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization |
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Wed.
11.45-12.00 |
N. J. Pilgrim, W.
Batty, R. W. Kelsall Institute of
Microwaves and Photonics, School of Electronic and Electrical Engineering,
University of Leeds Electrothermal Monte Carlo simulations of
InGaAs/GaAs HEMTs |
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Wed.
12.00-12.15 |
J. Branlard, S.
Aboud, S. Goodnick, and M. Saraniti Electrical and
Computer Engineering Department, Illinois Institute of Technology Frequency analysis of 3D GaAs MESFET
structures using full-band particle-based simulations. |
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Wed. 12.15-12.30 |
A. Gehring, H. Kosina, and S. Selberherr Institute for
Microelectronics, TU Vienna Analysis of Gate Dielectric Stacks Using
the Transmitting Boundary Method |
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Wed.
12.30-12.45 |
M.
Städele, F. Sacconi, A. Di Carlo, and P. Lugli Infineon
Technologies AG and INFM-Università degli Studi di Roma Tor Vergata Tunnel mass enhancement and oxide
thickness corrections in ultrathin SiO2 layers |
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Wed.
12.45-14.00 |
LUNCH BREAK |
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Wednesday, 28 May 2003 |
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Wed.
14.00-14.15 |
T. Kuhn, M.
Glanemann, and V.M. Axt Institut fur
Festkorpertheorie, Westfalische Wilhelms Universitat Munster Quantum control of carrier capture
processes into localized states of a quantum dot |
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Wed.
14.15-14.30 |
Fabiano
Oyafuso, Gerhard Klimeck, Timothy B. Boykin*, R. Chris Bowen, and Paul von
Allmen Jet Propulsion
Laboratory, California Institute of Technology Study of Strain Boundary Conditions and
GaAs Buffer Sizes in InGaAs Quantum Dots |
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Wed.
14.30-14.45 |
M. Sabathil, D.
Mamaluy, and P. Vogl 1Walter Schottky Institut, Technische Universität München Efficient computational method for
ballistic current and application to quantum dot RTD's |
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Wed.
14.45-15.00 |
M.
Povolotskyi, J.Gleize, A. Di Carlo, P. Lugli, S.Birner, P.Vogl INFM-Università
degli Studi di Roma Tor Vergata and
Walter Schottky Institute Microscopic Description of Nanostructures
grown on (N11) surfaces |
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Wed.
15.00-15.15 |
R. Akis, J.P.
Bird and D.K. Ferry Department of
Electrical Engineering, ASU Signatures of a Discrete Level Spectrum
and Dynamical Tunneling in the Conductance of a Large Open Quantum Dots |
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Wed.
15.15-15.30 |
Devis
Belluci, Massimo Rontani, Filippo Troiani, Guido Goldoni and Elisa Molinari INFM - National
Research Center on nanoStructures and bioSystems at Surfaces (S3) and Dipartimento di Fisica, Università degli Studi di Modena e Reggio
Emilia Spin-Spin
Interaction In Artificial Molecules With In-Plane Magnetic Field |
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Wed. 15.30- 15.45 |
CLOSING REMARKS |
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Poster Session 16.00 – 18.30
Monday, 26 May 2003 |
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1 |
C.Alexander, J.
R. Watling and A. Asenov Department of
Electronics and Electrical Engineering Device Modelling Group, University of
Glasgow Mobility variations in ultra-small
devices due to discrete charges |
|
2 |
Andrea
Bertoni Dipartimento
di Elettronica Informatica e Sistemistica, Università di Bologna Simulation of electron decoherence
induced by carrier-carrier scattering |
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3 |
L.
Boeri, G. Bachelet, E. Cappelluti, L. Pietronero Dipartimento
di Fisica, Roma "la Sapienza" Anharmonicity and non-adiabatic e-ph
interaction in MgB2 and bad actors superconductors |
|
4 |
A.
Bolognesi, A. Di Carlo Dipartimento
di Ingegneria Elettronica, Universita di Roma "Tor Vergata" Influence of carrier mobility and trap
states on the transfer and output characteristics of organic thin film
transistors |
|
5 |
L.
Berletti, L. Demeio, O. Morandi, G. Frosali Dipartimento
di Matematica, Università di Firenze Numerical
simulation of the Wigner-Kane model for a tunneling
diode |
|
6 |
A.
Caddemi, N. Donato, M.G. Xibilia Faculty of
Engineering, University of Messina Advanced Simulation of Semiconductor
Devices by Artifical Neural Networks |
|
7 |
G.
Curatola, G. Iannaccone Dipartimento
di Ingegneria dell'Informazione, Università di Pisa Ballistic transport in SiGe and strained
Si Mosfet |
|
8 |
L.
Demeio Dipartimento
di Scienze Matematice, Università di Ancona Splitting scheme solution of the
collisionless Wigner equation with non-parabolic band profile |
|
9 |
Chris Duffy and
Paul Hasler Department of
Electrical and Computer Engineering, Georgia Institute of Technology Modeling Hot-Electron Injection in PFET’s |
|
10 |
G. Roy, A. R.
Brown, A. Asenov, S. Roy Device
Modelling Group, Department of Electronics and Electrical Engineering,
Glasgow University Quantum Aspects of Resolving Discrete
Charges in “Atomistic” Device Simulations |
|
11 |
J. Shi, I. M.
Gamba Dept. of Mathematics,
University of Texas A high order Wigner solver for quantum
transport in nanostructures |
|
12 |
M.J. Gilbert,
S.N. Milicic, R. Akis, and D.K. Ferry Department of
Electrical Engineering and Center for Solid State Electronics Research,
Arizona State University Modeling of Fully Depleted Short Channel
SOI MOSFETs in 3D using Recursive Scattering Matrices with Self-Consistent
Potentials |
|
13 |
D. Guan, A.
Godoy, U. Ravaioli and F. Gamiz Beckman
Institute, University of Illinois at Urbana-Champaign Comparison between non-equilibrium
Green’s function and Monte Carlo simulations for transport in a silicon
quantum wire structure |
|
14 |
K. Kalna, L.
Yang and A. Asenov Device
Modelling Group, Department of Electronics and Electrical Engineering,
Glasgow University Simulation Study of High Performance
III-V MOSFETs for Digital Applications |
|
15 |
W Ma, S Kaya
and A Asenov SEECS, Russ
College of Engineering & Technology, Ohio University Study of RF Linearity in sub-50nm MOSFETs
Using Simulations |
|
16 |
Z Ikonic, P
Harrison and R W Kelsall Institute of
Microwaves and Photonics, School of Electronic and Electrical Engineering,
University of Leeds Simulation of Carrier
Transport in p-Si/SiGe Quantum Cascade Emitters |
|
17 |
G.
Leuzzi, A. Mencattini, M. Salmeri Dipartimento
di Ingegneria Elettronica, Università di Roma "Tor Vergata" Physical based correction of extracted
conductance parameters of nonlinear microwave semiconductor devices |
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18 |
L. Yang, J. R.
Watling, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy Department of
Electronics and Electrical Engineering, Glasgow University Simulations of scaled sub-100nm strained
Si p-channel MOSFETs |
|
19 |
A. J.
Garcıa-Loureiro, K. Kalna, A. Asenov and J. M. Lopez-Gonzalez Departmento de
Electr´onica y Computaci´on, Universidad de Santiago de Compostela 3D Parallel Simulations of Alloy and
Dopant Fluctuation Effects in PHEMTs |
|
20 |
A.Majorana,
J.Carrillo, I.M.Gamba, Chi-Wang Shu Dipartimento
di Matematica e Informatica, Università Degli Studi di Catania A Direct solver for 2D non-stationary
Boltzmann-poisson systems for semiconductor devices: a MESFET simulation by
WENO-Boltzmann schemes. |
|
21 |
Alex
Marchi, Susanna Reggiani, Andrea Bertoni, Massimo Rudan Advanced
Research Center on Electronic System “E. DeCastro” and DEIS, Università di
Bologna Two-particle eigenfunctions of electrons
propagating in two parallel quantum wires |
|
22 |
P.Marconcini,
M.Macucci Dipartimento
dell'Informazione Università Degli Studi di Pisa Numerical techniques for the evaluation
of conductance and noise in the presence of a perpendicular magnetic field. |
|
23 |
M.G.Pala,
G. Iannaccone Dipartimento
di Ingegneria dell'Informazione, Università di Pisa Modeling decoherence effects on transport
properties of mesoscopic devices |
|
24 |
A.Giorgio
A. Perri Electron
Devices Laboratory, Dipartimento di Elettrotecnica ed Elettronica,
Politecnico di Bari Modelling Photonic Band-Gap Structures
having Multiple Defects |
|
25 |
A.
Giorgio A.G. Perri Dipartimento
di Elettrotecnica ed Elettronica, Politecnico di Bari, Laboratori di
Dispositivi Elettronici Design and Modelling of Phothonic
Band-Gap Resonance Cavity |
|
26 |
S.
Picozzi1,A. Pecchia2, M. Gheorghe2, A. Di
Carlo2, P. Lugli2, B. Delley3, M. Elstner4 1INFM and Dip.
Fisica, Univ.
L'Aquila, INFM and Dip. Ing. Elettronica,
Univ. Roma Tor Vergata, 3Paul Scherrer Institut, Villigen, 4Dept. of Physics, University of
Paderborn A first-principles study of the Schottky
barrier height at the organic/metal junctions in PTCDA/(Al,Ag) systems |
|
27 |
A.Reale, P.Lugli INFM e
Department of Electronic Engineering, University of Rome Tor Vergata, Rome Modeling nonlinear propagation of optical
signals in semiconductor optical amplifiers |
|
28 |
V.Romano Dipartimento
di Matematica e Informatica, Università degli Studi di Catania Numerical Simulations of Electron Devices
by the MEP hydrodynamical model of semiconductors |
|
29 |
M.
Rosini, C. Jacoboni, S. Ossicini INFM-S3. Dept.
Of Physics University of Modena Semiclassical and quantum
transport in Si/SiO2 Superlattices |
|
30 |
S.Roy, A.Lee,
A.R. Brown, A. Asenov Device
Modelling Group, Department of Electronics and Electrical Engineering,
University of Glasgow Applicability of quasi-3D and 3D MOSFET
simulations in the 'atomistic' regime |
|
31 |
S.Roy,
B.J.Cheng, G.Roy, A.Asenov Device
Modelling Group, Department of Electronics and Electrical Engineering,
University of Glasgow A methodology for introducing ‘atomistic’
parameter fluctuations into compact device models for circuit analysis. |
|
32 |
M.
Manenti, F. Compagnone, A. Di Carlo and P. Lugli Dipartimento
di Ingegneria Elettronica Università di Roma Tor Vergata Monte Carlo Simulations of
Terahertz Emitting Quantum-Cascade Lasers |
|
33 |
F.
Sacconi, A. Di Carlo, P. Lugli and M. Städele Dept.
Electronic. Eng. University of Rome "Tor Vergata", Rome Full-band tunneling currents in nanometer-scale MOS structures |
|
34 |
Santhosh
Krishnan, Barry Zorman and Dragica Vasileska Dept.
Electrical Eng. ASU Self Consistent Subband Structure and Low
Field Mobility calculation of Two
Dimensional Holes in Si-SiGe Heterostructure FETs |
|
35 |
Johann Sée,
Philippe Dollfus, Sylvie Galdin and Patrice Hesto Institut d’Électronique Fondamentale, Université Paris-Sud Coulomb Blockade in Silicon Devices:
Electronic Structure of Quantum Dots |
|
36 |
P.Shiktorov, E.
Starikov, V. Gruzinkis, L. Regiani Semiconductor
Physics Institute, Vilnius Monte Carlo simulations of electronic
nois in semiconductor materials an devices operating under cyclostationary
conditions |
|
37 |
Constantinos Simserides Leibniz
Institute for Neurobiology, Magdeburg The Density of States and the pertinent
Electronic Properties of the quasi
two-dimensional-electron-gas in Simple and Diluted Magnetic Semiconductor
heterostructures subjected to an in-plane magnetic field |
|
38 |
A.
Sleiman, A. Di Carlo, P. Lugli Dipartimento
di Ingegneria Elettronica, Università di Roma "Tor Vergata" Monte Carlo Study of RF breakdown in
HEMT's |
|
39 |
E.
Starikov, P.Shiktorov, V. Gruzinkis,
L. Regiani, L. Varani, J.C. Vaissiere Semiconductor
Physics Institute, Vilnius THz generation from dynamic free carrier
superlattices in n+nn+ InN structures |
|
40 |
Alessandro
Toscano and Lucio Vegni University
“Roma Tre”, Dept. of Applied Electronics Advanced Electromagnetic Modelling of
Multilayer Monolithic Microwave Integrated Circuits |
|
41 |
J. R. Watling,
L. Yang, M. Boriçi, J. R. Barker and A. Asenov Department of
Electronics and Electrical Engineering University of Glasgow Degeneracy and high doping effects in
deep sub-micron relaxed and strained Si n-MOSFETs |
|
42 |
Shinya
Yamakawa, Shela J. Wigger, Marco Saraniti, and Stephen M. Goodnick Department of
Electrical Engineering, Arizona State University Fast Full-band Device Simulator for
Wurtzite and Zincblende GaN MESFET using a Cellular Monte Carlo method |
|
43 |
Yiming Li and
Hsiao-Mei Lu National Nano
Device Laboratories, Taiwan Effect of Shape and Size on Electron
Transition Energies for Nanoscale InAs/GaAs Quantum Rings |
|
44 |
Yiming Li
Ting-wei Tang, and Shao-Ming Yu National Nano
Device Laboratories, Taiwan A Quantum Correction Model for Nanoscale
Double Gate MOS Devices Under inversion conditions |
|
45 |
R. Akis and
D.K.Ferry Dept. Elect.
Eng. And Center for Solid State Electronic Research, Arizona State
University Kinetic lattice Monte Carlo Simulations
of Processes on the Silicon (100) Surface |